IRF7317 International Rectifier Corp., IRF7317 Datasheet

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IRF7317

Manufacturer Part Number
IRF7317
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Thermal Resistance Ratings
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings ( T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
With these improvements,
Parameter
A
T
T
T
T
= 25°C Unless Otherwise Noted)
PRELIMINARY
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
G 2
G 1
S2
S 1
T
Symbol
dv/dt
J,
V
V
E
E
I
I
DM
T
AR
I
GS
AR
DS
S
AS
N -C H A N N EL M O S FET
1
2
3
P -C H AN N E L MO S FET
4
STG
T o p V ie w
Symbol
N-Channel
R
HEXFET
JA
8
100
7
6
5
6.6
5.3
2.5
4.1
5.0
20
26
-55 to + 150 °C
Maximum
D 1
D 1
D 2
D 2
S O -8
± 12
0.20
2.0
1.3
R
V
®
P-Channel
DS(on)
DSS
IRF7317
Limit
Power MOSFET
62.5
-5.3
-4.3
-2.5
150
-2.9
-5.0
-20
-21
0.029
N-Ch
20V
PD - 9.1568B
Units
Units
°C/W
0.058
V/ ns
-20V
P-Ch
mJ
mJ
W
A
A
12/9/97

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IRF7317 Summary of contents

Page 1

... 70° 25° 70° 100 dv/dt 5 STG Symbol 9.1568B IRF7317 ® Power MOSFET N-Ch P- 20V -20V DSS 0.029 0.058 DS(on Maximum Units P-Channel -20 ± 12 -5.3 -4.3 A -21 -2.5 2.0 W 1.3 150 mJ -2 ...

Page 2

... IRF7317 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 1.50V 10 ° 0 Fig 2. Typical Output Characteristics 100 10 1 0.4 0.6 3 Fig 4. Typical Source-Drain Diode IRF7317 1.50V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) ° 150 C J ° 0.8 1.0 1.2 1.4 1.6 ,Source-to-Drain Voltage (V) ...

Page 4

... IRF7317 2.0 6. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature Fig 5. Normalized On-Resistance Vs. Temperature 0.05 0.04 0. 6.6A D 0.02 0. Gate-to-S ource V oltage ( Fig 7. Typical On-Resistance Vs. Gate Voltage N-Channel 0.032 0.028 0.024 V = 4.5V GS 0.020 80 100 120 140 160 0 ° Fig 6. Typical On-Resistance Vs. Drain 300 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient N-Channel 6. 100 Fig 10. Typical Gate Charge Vs. 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7317 V = 10V Total Gate Charge (nC) G Gate-to-Source Voltage Notes: 1. Duty factor ...

Page 6

... IRF7317 100 VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V 10 -1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 12. Typical Output Characteristics 100 ° 150 20µs PULSE WIDTH 1 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Fig 14 ...

Page 7

... Fig 17. Typical On-Resistance Vs. Drain 400 300 200 100 6.0 8.0 Starting T , Junction Temperature ( C) Fig 19. Maximum Avalanche Energy Vs. Drain Current IRF7317 V = -2. -4. Drain Current ( Drain Current (A) D Current ...

Page 8

... IRF7317 1400 1200 oss ds gd 1000 800 600 400 200 rain-to-S ource V oltage ( Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage 100 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0 ...

Page 9

... 45° 0.10 (.004 IRF7317 INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 ...

Page 10

... IRF7317 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches 8.1 ( .318 ) 7.9 ( .312 ) ( ...

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