IRF7319

Manufacturer Part NumberIRF7319
ManufacturerInternational Rectifier Corp.
IRF7319 datasheet
 
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Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings ( T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
PRELIMINARY
N -C H A N N E L M O S F E T
1
S 1
2
G 1
3
S 2
4
G 2
P -C H A N N E L M O S FE T
Top View
= 25°C Unless Otherwise Noted)
A
Symbol
N-Channel
V
DS
V
GS
T
= 25°C
A
T
= 70°C
A
I
DM
I
S
T
= 25°C
A
T
= 70°C
A
E
AS
I
AR
E
AR
dv/dt
T
T
J,
STG
Symbol
R
PD - 9.1606A
IRF7319
®
HEXFET
Power MOSFET
N-Ch
P-Ch
8
D1
7
D 1
V
30V
-30V
DSS
6
D2
5
D 2
R
0.029
0.058
DS(on)
S O -8
Maximum
Units
P-Channel
30
-30
± 20
6.5
-4.9
5.2
-3.9
A
30
-30
2.5
-2.5
2.0
W
1.3
82
140
mJ
4.0
-2.8
A
0.20
mJ
5.0
-5.0
V/ ns
-55 to + 150 °C
Limit
Units
62.5
JA
°C/W
9/15/97

IRF7319 Summary of contents