IRF7380 International Rectifier Corp., IRF7380 Datasheet

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IRF7380

Manufacturer Part Number
IRF7380
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Benefits
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Applications
www.irf.com
V
V
I
I
I
P
dv/dt
T
T
R
R
Notes  through † are on page 8
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
@T
A
A
A
= 25°C
= 100°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
to Simplify Design, (See
Parameter
Parameter
e
GS
GS
@ 10V
@ 10V
V
80V
DSS
G2
G1
S2
S1
1
2
3
4
Top View
73m @V
Typ.
–––
–––
R
-55 to + 150
HEXFET
DS(on)
8
7
6
5
Max.
3.6
± 20
0.02
2.9
2.0
2.3
80
29
h
D1
D1
D2
D2
GS
max
Max.
®
42
50
IRF7380
= 10V 3.6A
Power MOSFET
SO-8
Units
Units
W/°C
°C/W
V/ns
°C
W
V
A
I
07/09/08
D
1

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IRF7380 Summary of contents

Page 1

... Top View Max. 80 ± 10V 3 10V 2 2.0 0.02 e 2.3 - 150 Typ. ––– ––– IRF7380 ® Power MOSFET max 10V 3. SO-8 Units W/°C V/ns °C Max. Units 42 °C 07/09/08 ...

Page 2

... IRF7380 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... VGS TOP 15V 10V 7.0V 5.0V 4.5V 4.3V 10 4.0V BOTTOM 3.7V 1 0.1 0.1 100 1000 Fig 2. Typical Output Characteristics 2.5 3. 2.0 1.5 1.0 0.5 0.0 6.0 7.0 -60 -40 Fig 4. Normalized On-Resistance IRF7380 VGS TOP 15V 10V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V 3.7V 20µs PULSE WIDTH Tj = 150° 100 Drain-to-Source Voltage ( 10V GS - 100 120 140 T , Junction Temperature (° ...

Page 4

... IRF7380 100000 0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7380 + - ≤ 1 ≤ 0 d(off ...

Page 6

... IRF7380 10V Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit ...

Page 7

... PPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "YÃ !&Ãb$d 96U@Ã8P9@Ã`XX `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F ;;;; 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@  GPUÃ8P9@ GPBP IRF7380 DI8C@T HDGGDH@U@ST HDI H6Y HDI H6Y $"! %'' "$ &$ # (' ...

Page 8

... IRF7380 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes:  ...

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