IRFB9N60

Manufacturer Part NumberIRFB9N60
ManufacturerVishay Semiconductors
IRFB9N60 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (136Kb)Embed
Next
PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 Ω, I
b. Starting T
= 25 °C, L = 24 mH, R
J
G
≤ 5.2 A, dI/dt ≤ 90 A/µs, V
≤ V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
Power MOSFET
FEATURES
• Low Gate Charge Q
650
Requirement
0.93
• Improved Gate, Avalanche and Dynamic dV/dt
48
Ruggedness
12
• Fully Characterized Capacitance and Avalanche Voltage
19
and Current
Single
• Lead (Pb)-free Available
D
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
S
• Single Transistor Forward
N-Channel MOSFET
TO-220
IRFB9N65APbF
SiHFB9N65A-E3
IRFB9N65A
SiHFB9N65A
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 5.2 A (see fig. 12).
AS
≤ 150 °C.
J
IRFB9N65A, SiHFB9N65A
Vishay Siliconix
Results in Simple Drive
g
SYMBOL
LIMIT
V
650
DS
V
± 30
GS
8.5
I
D
5.4
I
21
DM
1.3
E
325
AS
I
5.2
AR
E
16
AR
P
167
D
dV/dt
2.8
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRFB9N60 Summary of contents