IRFB9N60 Vishay Semiconductors, IRFB9N60 Datasheet
IRFB9N60
Available stocks
Related parts for IRFB9N60
IRFB9N60 Summary of contents
Page 1
PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration TO-220 ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS T PARAMETER ...
Page 2
IRFB9N65A, SiHFB9N65A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
Page 3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. 20µs PULSE WIDTH 4. 0.1 0 Drain-to-Source Voltage (V) DS ...
Page 4
IRFB9N65A, SiHFB9N65A Vishay Siliconix 2000 1MHz iss rss oss ds gd 1600 C iss 1200 C ...
Page 5
T , Case Temperature ( C) C Fig Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...
Page 6
IRFB9N65A, SiHFB9N65A Vishay Siliconix 800 600 400 200 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 800 780 760 740 720 700 ...
Page 7
D.U. Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ...
Page 8
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...