IRFP260N

Manufacturer Part NumberIRFP260N
ManufacturerInternational Rectifier Corp.
IRFP260N datasheet
 


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Advanced Process Technology
l
l
Dynamic dv/dt Rating
175°C Operating Temperature
l
Fast Switching
l
l
Fully Avalanche Rated
Ease of Paralleling
l
l
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
www.irf.com
G
@ 10V
GS
@ 10V
GS


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ƒ
300 (1.6mm from case )
Typ.
0.24
PD - 94004B
IRFP260N
®
HEXFET
Power MOSFET
D
V
= 200V
DSS
R
= 0.04Ω
DS(on)
I
= 50A
D
S
TO-247AC
Max.
Units
50
35
A
200
300
W
2.0
W/°C
±20
V
560
mJ
50
A
30
mJ
10
V/ns
-55 to +175
°C
10 lbf•in (1.1N•m)
Max.
Units
–––
0.50
–––
°C/W
–––
40
1
10/08/04

IRFP260N Summary of contents