IRFP260N

Manufacturer Part NumberIRFP260N
ManufacturerInternational Rectifier Corp.
IRFP260N datasheet
 


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Electrical Characteristics T

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IRFP260N
Electrical Characteristics @ T
Parameter
V
Drain-to-Source Breakdown Voltage
(BR)DSS
∆V
Breakdown Voltage Temp. Coefficient
/∆T
(BR)DSS
J
R
Static Drain-to-Source On-Resistance
DS(on)
V
Gate Threshold Voltage
GS(th)
g
Forward Transconductance
fs
I
Drain-to-Source Leakage Current
DSS
Gate-to-Source Forward Leakage
I
GSS
Gate-to-Source Reverse Leakage
Q
Total Gate Charge
g
Q
Gate-to-Source Charge
gs
Q
Gate-to-Drain ("Miller") Charge
gd
t
Turn-On Delay Time
d(on)
t
Rise Time
r
t
Turn-Off Delay Time
d(off)
t
Fall Time
f
L
Internal Drain Inductance
D
L
Internal Source Inductance
S
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
Source-Drain Ratings and Characteristics
Parameter
I
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
I
SM

(Body Diode)
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
t
Forward Turn-On Time
on
Notes:

Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
= 25°C, L = 1.5mH
J
R
= 25Ω, I
= 28A.
G
AS
2
= 25°C (unless otherwise specified)
J
Min. Typ. Max. Units
200
–––
–––
V
–––
0.26 –––
V/°C
–––
––– 0.04
2.0
–––
4.0
V
27
–––
–––
S
–––
–––
25
µA
–––
–––
250
–––
–––
100
nA
–––
––– -100
–––
–––
234
–––
–––
38
nC
–––
–––
110
–––
17
–––
–––
60
–––
ns
–––
55
–––
–––
48
–––
–––
5.0
–––
nH
–––
–––
13
–––
4057 –––
–––
603
–––
pF
–––
161
–––
Min. Typ. Max. Units
50
–––
–––
A
–––
–––
200
–––
–––
1.3
V
–––
268
402
ns
µC
–––
1.9
2.8
Intrinsic turn-on time is negligible (turn-on is dominated by L
ƒ
≤ 28A di/d ≤ 486A/µs, V
I
SD
≤ 175°C
T
J
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Conditions
V
= 0V, I
= 250µA
GS
D
Reference to 25°C, I
= 1mA
D
V
= 10V, I
= 28A
GS
D
V
= V
, I
= 250µA
DS
GS
D
= 28A „
V
= 50V, I
DS
D
V
= 200V, V
= 0V
DS
GS
V
= 160V, V
= 0V, T
= 150°C
DS
GS
J
V
= 20V
GS
V
= -20V
GS
I
= 28A
D
V
= 160V
DS
V
= 10V
GS
V
= 100V
DD
I
= 28A
D
R
= 1.8Ω
G
V
= 10V
GS
Between lead,
D
6mm (0.25in.)
G
from package
and center of die contact
S
V
= 0V
GS
V
= 25V
DS
ƒ = 1.0MHz
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
T
= 25°C, I
= 28A, V
= 0V
J
S
GS
T
= 25°C, I
= 28A
J
F
di/dt = 100A/µs
+L
)
S
D
≤ V
,
DD
(BR)DSS
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