IRFP2907

Manufacturer Part NumberIRFP2907
ManufacturerInternational Rectifier Corp.
IRFP2907 datasheet
 


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Typical Applications
Integrated Starter Alternator
l
42 Volts Automotive Electrical Systems
l
Benefits
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
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Fast Switching
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Repetitive Avalanche Allowed up to Tjmax
l
Description
Specifically designed for Automotive applications, this
®
Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current 
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy‚
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy‡
AR
dv/dt
Peak Diode Recovery dv/dt ƒ
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
www.irf.com
AUTOMOTIVE MOSFET
G
Power MOSFETs
G
Gate
@ 10V
GS
@ 10V
GS
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
Typ.
IRFP2907
®
HEXFET
Power MOSFET
D
V
= 75V
DSS
R
= 4.5mΩ
DS(on)
I
= 209A†
D
S
D
S
D
G
TO-247AC
D
S
Drain
Source
Max.
Units
209†
148†
A
840
470
W
3.1
W/°C
± 20
V
1970
mJ
A
mJ
5.0
V/ns
-55 to + 175
°C
10 lbf•in (1.1N•m)
Max.
Units
–––
0.32
0.24
–––
°C/W
–––
40
1

IRFP2907 Summary of contents