IRFR3412 International Rectifier Corp., IRFR3412 Datasheet
IRFR3412
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IRFR3412 Summary of contents
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... V T ––– 68 100 ns T di/dt = 100A/µs „ ––– 160 240 nC ––– 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by L IRFR3412 IRFU3412 R max I DS(on) D 0.025 48A† I-Pak IRFU3412 Units † † A 190 140 W 0.95 W/° ...
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Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 100 5.5V 5.0V BOTTOM 4. 0.1 4.5V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ...
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0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss Crss 100 1 10 ...
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LIMITED BY PACKAGE 100 T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) ...
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D.U 20V GS 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + ƒ - „ P.W. Period D = ...
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A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 5.97 (.235) 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 0.89 (.035) 3X 0.64 (.025) 1.14 (.045) 2X 0.25 (.010) 0.76 (.030) 2.28 ...
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A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...
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TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...