IRFR9N20D International Rectifier Corp., IRFR9N20D Datasheet

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IRFR9N20D

Manufacturer Part Number
IRFR9N20D
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Typical SMPS Topologies
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
I
I
I
P
V
dv/dt
T
T
Notes
D
D
DM
STG
D
GS
J
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Telecom 48V input Forward Converter
Switching Losses
C
C
C
= 25°C
= 100°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Power Dissipation
to Simplify Design, (See
are on page 10
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
200V
DSS
300 (1.6mm from case )
IRFR9N20D
HEXFET
D-Pak
-55 to + 175
R
Max.
0.57
± 30
9.4
6.7
5.0
DS(on)
38
86
0.38
®
Power MOSFET
IRFU9N20D
max
IRFR9N20D
IRFU9N20D
I-Pak
PD - 93919A
Units
W/°C
9.4A
V/ns
°C
W
I
A
V
D
1
6/29/00

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IRFR9N20D Summary of contents

Page 1

... Typical SMPS Topologies Telecom 48V input Forward Converter Notes through are on page 10 www.irf.com SMPS MOSFET HEXFET V DSS 200V D-Pak IRFR9N20D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) PD - 93919A IRFR9N20D IRFU9N20D ® Power MOSFET R max I DS(on) D 0.38 9.4A I-Pak IRFU9N20D Max. Units 9.4 6 ...

Page 2

... IRFR9N20D/IRFU9N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... DS Fig 1. Typical Output Characteristics 100 10 ° 175 ° 20µs PULSE WIDTH 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRFR9N20D/IRFU9N20D 100 TOP BOTTOM 10 1 5.5V ° 0.1 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 - Fig 4 ...

Page 4

... IRFR9N20D/IRFU9N20D 10000 0V, C iss = rss = oss = 1000 Ciss 100 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 175 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFR9N20D/IRFU9N20D R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...

Page 6

... IRFR9N20D/IRFU9N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 200 160 ...

Page 7

... Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFR9N20D/IRFU9N20D Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. ...

Page 8

... IRFR9N20D/IRFU9N20D D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. 1 1 ...

Page 9

... (. (. .28 (. I-Pak (TO-251AA) Part Marking Information www.irf.com IRFR9N20D/IRFU9N20D (. (. (. (. (. (. & ...

Page 10

... IRFR9N20D/IRFU9N20D D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches 12 11 LLIN G D IME ILL ILLIM ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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