IRFZ24N International Rectifier Corp., IRFZ24N Datasheet

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G from @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– 91354A IRFZ24N 55V DSS R = 0.07 DS(on 17A D S TO-220AB Max. Units ...

Page 2

... IRFZ24N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... ate-to -So urce Voltag e ( Fig 3. Typical Transfer Characteristics www.irf.com ° IRFZ24N VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. .5V 2 0µ 5° 0.1 ...

Page 4

... IRFZ24N iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V 90 10% V Fig 10b. Switching Time Waveforms 0.001 ectang ular P ulse D uration (sec) 1 IRFZ24N D.U. 10V Pulse Width µs Duty Factor DS ...

Page 6

... IRFZ24N V DS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 0.01 V (BR)DSS V DD ...

Page 7

... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® power MOSFETs IRFZ24N „ P.W. Period V =10V * ...

Page 8

... IRFZ24N Package Outline TO-220AB Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...