IRFZ44N

Manufacturer Part NumberIRFZ44N
ManufacturerInternational Rectifier Corp.
IRFZ44N datasheet
 

Specifications of IRFZ44N

CaseTO-263  
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Advanced Process Technology
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Ultra Low On-Resistance
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Dynamic dv/dt Rating
175°C Operating Temperature
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Fast Switching
Fully Avalanche Rated
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Description
®
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
www.irf.com
G
The low thermal
@ 10V
GS
@ 10V
GS



ƒ
300 (1.6mm from case )
Typ.
0.50
PD - 94053
IRFZ44N
®
HEXFET
Power MOSFET
D
V
= 55V
DSS
R
= 17.5m
DS(on)
I
= 49A
D
S
TO-220AB
Max.
Units
49
35
A
160
94
W
0.63
W/°C
± 20
V
25
A
9.4
mJ
5.0
V/ns
-55 to + 175
°C
10 lbf•in (1.1N•m)
Max.
Units
–––
1.5
–––
°C/W
–––
62
1
01/03/01

IRFZ44N Summary of contents