IRG4PC30UD International Rectifier Corp., IRG4PC30UD Datasheet

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IRG4PC30UD

Manufacturer Part Number
IRG4PC30UD
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30UD
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRG4PC30UD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4PC30UDPBF
Manufacturer:
IR
Quantity:
20 000
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Generation -4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
R
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
LM
FM
IGBT's . Minimized recovery characteristics require
C
C
CM
F
kHz in resonant mode
parameter distribution and higher efficiency than
Generation 3
available
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
industry-standard Generation 3 IR IGBT's
STG
less/no snubbing
CES
GE
D
D
J
frequencies 8-40 kHz in hard switching, >200
@ T
JA
@ T
@ T
JC
JC
CS
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
TM
ultrafast,
G
n-cha nn el
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
IRG4PC30UD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
UltraFast CoPack IGBT
Max.
6 (0.21)
TO-247AC
± 20
600
100
Typ.
------
------
23
12
92
92
12
92
42
0.24
-----
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
1.2
2.5
40
= 600V
PD 91462B
C
1.95V
= 12A
12/30/00
Units
Units
g (oz)
°C/W
°C
W
V
A
V
1

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IRG4PC30UD Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4PC30UD G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD 91462B UltraFast CoPack IGBT 600V ...

Page 2

... IRG4PC30UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... ° ° 0 Fig Typical Transfer Characteristics IRG4PC30UD cle : 5° °C sink Gate d rive as spe cified Tu rn-on los ses in clu de effec ts of revers e reco ve ry Power D iss ipat ion = 24W ° ...

Page 4

... IRG4PC30UD (° Fig Maximum Collector Current vs. Case Temperature 0.5 0 0. ...

Page 5

... 15V 480V 0.1 -60 - Fig Typical Switching Losses vs. IRG4PC30UD = Gate-to-Emitter Voltage I = 24A 12A 6. ...

Page 6

... IRG4PC30UD 2 150° 480V 15V 1 1.2 0.8 0.4 0 Collector-to-Emitter Current ( Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ...

Page 7

... ° 6 /µ Fig Typical Stored Charge vs. di www.irf.com IRG4PC30UD ° ° . Fig ...

Page 8

... IRG4PC30UD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...

Page 9

... www.irf.com D.U. 480V IRG4PC30UD 480V @25° ...

Page 10

... IRG4PC30UD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot (. (. (. (. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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