IRG4PC50F International Rectifier Corp., IRG4PC50F Datasheet
IRG4PC50F
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IRG4PC50F Summary of contents
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Features Features Features Features Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...
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olta dio 0.1 ...
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ase Tem perature (°C) C Fig Maximum Collector Current vs. Case ...
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MHz GE Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies oes 2 ...
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150° 480V 15V Collector-to-Emitter Current (A) C Fig. 11 ...
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L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
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(. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...