IRG4PC50W

Manufacturer Part NumberIRG4PC50W
ManufacturerInternational Rectifier Corp.
IRG4PC50W datasheet
 


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Features
Features
Features
Features
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
IRG4PC50W
C
V
CES
V
CE(on) max.
G
@V
= 15V, I
E
GE
n-channel
TO-247AC
Max.
600
55
27
220
220
± 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
Max.
–––
0.64
0.24
–––
–––
40
6 (0.21)
–––
= 600V
= 2.30V
= 27A
C
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
2/7/2000

IRG4PC50W Summary of contents