IRG4PF50W International Rectifier Corp., IRG4PF50W Datasheet

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IRG4PF50W

Manufacturer Part Number
IRG4PF50W
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number
Manufacturer
Quantity
Price
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IRG4PF50W
Manufacturer:
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INSULATED GATE BIPOLAR TRANSISTOR
• Optimized for use in Welding and Switch-Mode
• Industry benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
Benefits
• Lower switching losses allow more cost-effective
• Of particular benefit in single-ended converters and
• Reduction in critical Eoff parameter due to minimal
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
LM
CM
die MOSFETs up to 100kHz
efficiency of all power supply topologies
reliability
state losses allow maximum flexibility in device
application
STG
operation and hence efficient replacement of larger-
Power Supplies 150W and higher
minority-carrier recombination coupled with low on-
CES
GE
ARV
D
D
J
parameter distribution coupled with exceptional
Power Supply applications
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
IRG4PF50W
-55 to + 150
TO-247AC
Max.
± 20
900
204
204
186
200
28
78
51
V
@V
CE(on) typ.
Max.
V
0.64
GE
–––
–––
40
CES
= 15V, I
PD - 91710
= 900V
= 2.25V
C
Units
= 28A
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1
4/15/98

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IRG4PF50W Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4PF50W C V CES V CE(on) typ 15V n-channel TO-247AC Max. 900 51 28 204 204 ± ...

Page 2

... IRG4PF50W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage ––– 0.295 ––– (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance ...

Page 3

... Gate drive as specified Power Dissipation = 40W of fundamental; for triangular wave, I=I RMS 1000 100 T = 150 C ° 15V Fig Typical Transfer Characteristics IRG4PF50W Triangular wave: Clamp voltage: 80% of rated ) PK ° ° 50V CC 5µs PULSE WIDTH ...

Page 4

... IRG4PF50W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.5 2.0 1.5 125 150 -60 -40 -20 ° ...

Page 5

... Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 R = Ohm 15V 720V 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4PF50W = 400V = 28A 40 80 120 Q , Total Gate Charge (nC 100 120 140 160 T , Junction Temperature ( C ) ° ...

Page 6

... IRG4PF50W 12 5 Ohm 150 C ° 720V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 100 10 SAFE OPERATING AREA 20V o = 125 C 10 100 , Collector-to-Emitter Voltage (V) CE Fig ...

Page 7

... D river ff t=5µ IRG4PF50W 720V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 720V Fig ...

Page 8

... IRG4PF50W Case Outline and Dimensions — TO-247AC (. (. (. (. (. (. (. (. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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