IRG4PF50WD International Rectifier Corp., IRG4PF50WD Datasheet

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IRG4PF50WD

Manufacturer Part Number
IRG4PF50WD
Description
Manufacturer
International Rectifier Corp.
Datasheet

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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Optimized for use in Welding and Switch-Mode
• Industry benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Benefits
• Lower switching losses allow more cost-effective
• HEXFRED
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
MOSFETs up to 100kHz
Minimized recovery characteristics reduce noise, EMI and
C
C
CM
LM
F
FM
efficiency of all power supply topologies
parameter distribution coupled with
exceptional reliability
operation and hence efficient replacement of larger-die
switching losses
J
STG
CES
GE
D
D
Power Supply applications
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
diodes optimized for performance with IGBTs.
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
ultrafast,
G
n-cha n ne l
Min.
300 (0.063 in. (1.6mm) from case )
–––
–––
–––
–––
–––
IRG4PF50WD
C
E
10 lbf•in (1.1N•m)
-55 to + 150
TO-247AC
Max.
6 (0.21)
± 20
204
204
204
200
900
51
28
16
78
Typ.
0.24
–––
–––
–––
V
@V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
0.64
0.83
–––
–––
PD- 91788
40
= 900V
= 2.25V
C
= 28A
Units
Units
g (oz)
°C/W
°C
A
V
W
V
1

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IRG4PF50WD Summary of contents

Page 1

... JA Wt Weight www.irf.com G n-cha ultrafast, 300 (0.063 in. (1.6mm) from case ) Min. ––– ––– ––– ––– ––– PD- 91788 IRG4PF50WD 900V CES V = 2.25V CE(on) typ 15V TO-247AC Max. 900 ...

Page 2

... IRG4PF50WD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS ° 150 15V GE 20µs PULSE WIDTH 10 IRG4PF50WD oth: D uty 50 5° °C sink riv ified ipation = 10 1000 100 ° ...

Page 4

... IRG4PF50WD Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 100 125 150 ° Fig Collector-to-Emitter Voltage vs. 0.001 t , Rectangular Pulse Duration (sec ...

Page 5

... C 5.0 4.5 4.0 3 Gate Resistance G Fig Typical Switching Losses vs. Gate Resistance www.irf.com f = 1MHz C SHORTED 100 IRG4PF50WD 400V 28A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 5 15V ...

Page 6

... IRG4PF50WD 16 5 150 C ° 720V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 100 10 1 0.0 1.0 2.0 3 lta ...

Page 7

... Fig Typical Stored Charge vs. di www.irf.com 125° 25° 32A 16A 8.0A F 1000 Fig Typical Recovery Current vs. di /dt f 1000 /dt f IRG4PF50WD 00V 125 ° 25° 32A 16A 8. 100 /µ ...

Page 8

... IRG4PF50WD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ...

Page 9

... Figure 18a's D.U. 720V IRG4PF50WD Test Circuit Figure 20. Pulsed Collector Current Test Circuit 720V ...

Page 10

... IRG4PF50WD Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-247AC 15 .90 (. . (.77 5) ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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