IRG4PSH71K International Rectifier Corp., IRG4PSH71K Datasheet

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IRG4PSH71K

Manufacturer Part Number
IRG4PSH71K
Description
Manufacturer
International Rectifier Corp.
Datasheet

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INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance\ Mechanical
www.irf.com
• Hole-less clip/pressure mount package compatible
• High short circuit rating IGBTs, optimized for
• Minimum switching losses combined with low
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
• Highest current rating IGBT
• Maximum power density, twice the power
R
R
R
V
I
I
I
I
t
V
E
P
P
T
T
C
C
LM
SC
CM
STG
CES
GE
ARV
D
D
J
handling of the TO-247, less space than TO-264
motorcontrol
with TO-247 and TO-264, with reinforced pins
conduction losses
JC
CS
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
PRELIMINARY
G
n-channel
20.0(2.0)
Min.
–––
300 (0.063 in. (1.6mm from case )
–––
–––
–––
E
IRG4PSH71K
C
-55 to + 150
SUPER - 247
Max.
6 (0.21)
1200
± 20
156
156
170
350
140
78
42
10
Typ.
0.24
–––
–––
–––
Short Circuit Rated
V
@V
CE(on) typ.
V
UltraFast IGBT
GE
CES
PD - 91687A
= 15V, I
Max.
0.36
–––
–––
–––
= 1200V
38
= 2.97V
C
Units
= 42A
N (kgf)
Units
g (oz)
°C/W
mJ
µs
W
°C
A
V
V
1
5/11/99

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IRG4PSH71K Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Thermal Resistance\ Mechanical Parameter R Junction-to-Case JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Recommended Clip Force Weight www.irf.com IRG4PSH71K PRELIMINARY n-channel SUPER - 247 Max. 1200 156 156 ± 20 170 350 140 - 150 300 (0 ...

Page 2

... IRG4PSH71K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage ––– (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... Gate drive as specified Power Dissipation = 58W req ( fundamental; for triangular wave, I=I RMS 1000 100 T = 150 15V 1 5 4.0 5.0 Fig Typical Transfer Characteristics IRG4PSH71K Triangular wave: Clamp voltage: 80% of rated 10 100 ) PK ° ° 50V CC 5µs PULSE WIDTH 6 ...

Page 4

... IRG4PSH71K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature .50 0 0.05 0.0 2 0.01 SIN Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 ...

Page 5

... Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 15V 960V -60 -40 -20 Fig Typical Switching Losses vs. IRG4PSH71K 100 200 300 400 500 Q , Total Gate Charge (nC 100 120 140 160 ° ...

Page 6

... IRG4PSH71K 5 150 C ° 960V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 1000 V = 20V 125 C J 100 10 SAFE OPERATING AREA 100 1000 10000 , Collector-to-Emitter Voltage (V) Fig ...

Page 7

... D river ff t=5µ IRG4PSH71K 960V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig ...

Page 8

... IRG4PSH71K Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

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