IRG4PSH71K

Manufacturer Part NumberIRG4PSH71K
ManufacturerInternational Rectifier Corp.
IRG4PSH71K datasheet
 


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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
• High short circuit rating IGBTs, optimized for
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
• Creepage distance increased to 5.35mm
Benefits
• Highest current rating IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulsed Collector Current
CM
I
Clamped Inductive Load Current
LM
t
Short Circuit Withstand Time
SC
V
Gate-to-Emitter Voltage
GE
E
Reverse Voltage Avalanche Energy
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance\ Mechanical
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, flat, greased surface
CS
R
Junction-to-Ambient, typical socket mount
JA
Recommended Clip Force
Weight
www.irf.com
IRG4PSH71K
PRELIMINARY
C
G
E
n-channel
SUPER - 247
Max.
1200
156
156
± 20
170
350
140
-55 to + 150
300 (0.063 in. (1.6mm from case )
Min.
–––
–––
–––
20.0(2.0)
–––
6 (0.21)
PD - 91687A
Short Circuit Rated
UltraFast IGBT
V
= 1200V
CES
V
= 2.97V
CE(on) typ.
@V
= 15V, I
= 42A
GE
C
Units
V
78
42
A
10
µs
V
mJ
W
°C
Typ.
Max.
Units
–––
0.36
0.24
–––
°C/W
–––
38
–––
–––
N (kgf)
–––
g (oz)
1
5/11/99

IRG4PSH71K Summary of contents