IRGB10B60KD

Manufacturer Part NumberIRGB10B60KD
ManufacturerInternational Rectifier Corp.
IRGB10B60KD datasheet
 


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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulsed Collector Current
CM
Clamped Inductive Load Current „
I
LM
I
@ T
= 25°C
Diode Continuous Forward Current
F
C
I
@ T
= 100°C
Diode Continuous Forward Current
F
C
I
Diode Maximum Forward Current
FM
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 sec.
Thermal Resistance
Parameter
R
Junction-to-Case - IGBT
TJC
R
Junction-to-Case - Diode
TJC
R
Case-to-Sink, flat, greased surface
TCS
R
Junction-to-Ambient, typical socket mount
TJA
R
Junction-to-Ambient (PCB Mount, steady state)
TJA
Wt
Weight
www.irf.com
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
C
V
= 600V
CES
I
= 12A, T
C
G
t
> 10µs, T
sc
E
V
n-channel
CE(on)
2
TO-220AB
D
Pak
IRGB10B60KD
IRGS10B60KD
Max.
600
22
12
44
44
22
10
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Min.
Typ.
–––
–––
–––
–––
–––
0.50

–––
–––
–––
–––
–––
1.44
PD - 94382D
=100°C
C
=150°C
J
typ. = 1.8V
TO-262
IRGSL10B60KD
Units
V
A
V
W
°C
Max.
Units
0.8
3.4
–––
°C/W
62
40
–––
g
1
8/18/04

IRGB10B60KD Summary of contents