IRGP30B120KD-E International Rectifier Corp., IRGP30B120KD-E Datasheet

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IRGP30B120KD-E

Manufacturer Part Number
IRGP30B120KD-E
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number:
IRGP30B120KD-E
Manufacturer:
IR
Quantity:
25 550
Part Number:
IRGP30B120KD-E
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IR
Quantity:
12 500
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IRGP30B120KD-E
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IRGP30B120KD-EP
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IRGP30B120KD-EP
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9 000
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Absolute Maximum Ratings
Benefits
Features
Thermal Resistance
• Low V
• Low Diode V
• 10
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive V
• Extended Lead TO-247AD Package
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
W
Z
C
C
CM
LM
F
FM
www.irf.com
J
STG
CES
GE
D
D
Technology
Applications
@ T
@ T
@ T
t
JC
JC
JC
CS
JA
@ T
@ T
µ
s Short Circuit Capability
C
C
C
C
C
= 100°C
= 25°C
= 100°C
CE
= 25°C
= 100°C
(on) Non Punch Through (NPT)
CE
(on) Temperature Coefficient
F
(1.76V Typical @ 25A & 25°C)
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
Parameter
Parameter
(Fig.3, Fig. CT.5)
(Fig.2)
(Fig.2)
(Fig.1)
(Fig.1)
(Fig.4, Fig. CT.2)
(Fig.24)
Min.
–––
–––
–––
–––
–––
G
300, (0.063 in. (1.6mm) from case)
N-channel
IRGP30B120KD-E
10 lbf•in (1.1N•m)
C
E
-55 to + 150
6 (0.21)
Motor Control Co-Pack IGBT
Max.
Typ.
1200
0.24
± 20
–––
–––
–––
120
120
120
300
120
60
30
30
TO-247AD
V
GE
V
CE(on) typ.
Max.
= 15V, I
V
0.42
0.83
–––
–––
40
CES
= 1200V
C
= 25A, 25°C
= 2.28V
PD- 93818
Units
Units
g (oz)
°C/W
°C
V
W
A
V
1
12/14/99

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IRGP30B120KD-E Summary of contents

Page 1

... Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA W Weight t Z Transient Thermal Impedance Junction-to-Case JC www.irf.com IRGP30B120KD-E G N-channel (Fig.1) (Fig.1) (Fig.3, Fig. CT.5) (Fig.4, Fig. CT.2) (Fig.2) (Fig.2) 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Min. ––– ...

Page 2

... IRGP30B120KD-E Electrical C haracteristics @ TJ = 25°C (unless otherw ise specified lle cto r- itte lta ff lta ...

Page 3

... V (V) CE www.irf.com 120 160 PULSED 2µs 10µ s 100µs 1ms 10ms DC 1000 10000 IRGP30B120KD-E Fig.2 - Power Dissipation vs. Case Temperature 320 280 240 200 160 120 120 T (°C) C Fig.4 - Reverse Bias SOA Tj = 150° 15V ...

Page 4

... IRGP30B120KD-E Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300µ 18V 15V 12V 10V Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300µ 18V 15V ...

Page 5

... GE I =10A CE I =25A CE I =50A ( =10A CE I =25A CE I =50A IRGP30B120KD-E Fig.10 - Typical Tj= 25° (V) GE Fig.12 - Typ. Transfer Characteristics V =20V ...

Page 6

... IRGP30B120KD-E Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200µH; V Rg= 8000 7000 6000 5000 4000 3000 2000 1000 (A) C Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200µ =25A; V =15V CE GE 3500 3300 3100 2900 2700 ...

Page 7

... Rg= 500 (A/µs) F www.irf.com / =15V Rg=10 Rg=22 1000 1500 IRGP30B120KD-E Fig.18 - Typical Diode Tj=125°C; I =25A (ohms) Fig.20 - Typical Diode =600V; V =15V ...

Page 8

... IRGP30B120KD-E Fig.22 - Typical Capacitance =0V; f=1MHz GE 10000 1000 100 ( Fig.21 - Typ. Diode E Tj=125°C 2400 2200 2000 1800 1600 1400 1200 1000 800 ies C oes C res 60 80 100 vs. I rec ...

Page 9

... Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case =0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.00010 www.irf.com Notes: 1. Duty factor Peak T 0.00100 0.01000 t , Rectangular Pulse Duration (sec) 1 IRGP30B120KD thJC C 0.10000 1.00000 10.00000 9 ...

Page 10

... IRGP30B120KD-E Fig. CT.1 - Gate Charge Circuit (turn-off Fig. CT.3 - S.C. SOA Circuit D riv 900V C Fig. CT.5 - Resistive Load Circuit Fig. CT.2 - RBSOA Circuit Fig. CT.4 - Switching Loss Circuit d iod e cla ...

Page 11

... 1.5 2.0 2 10% Peak - -20 -30 1.0 IRGP30B120KD-E Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 900 800 700 TEST CURRENT 600 500 90% test current 400 t r 300 10% test current 200 100 0 Eon Loss -100 4.0 4.1 4.2 4 (µs) Fig ...

Page 12

... IRGP30B120KD-E TO-247AD Case Outline and Dimensions IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 12 WORLD HEADQUARTERS: 233 Kansas St ...

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