IRGP50B60PD1

Manufacturer Part NumberIRGP50B60PD1
ManufacturerInternational Rectifier Corp.
IRGP50B60PD1 datasheet
 
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WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Features
NPT Technology, Positive Temperature Coefficient
Lower V
(SAT)
CE
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
Absolute Maximum Ratings
V
Collector-to-Emitter Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
I
Pulse Collector Current (Ref. Fig. C.T.4)
CM
Clamped Inductive Load Current
I
LM
I
@ T
= 25°C
Diode Continous Forward Current
F
C
I
@ T
= 100°C
Diode Continous Forward Current
F
C
Maximum Repetitive Forward Current
I
FRM
V
Gate-to-Emitter Voltage
GE
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
θJC
R
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
θJC
R
Thermal Resistance, Case-to-Sink (flat, greased surface)
θCS
R
Thermal Resistance, Junction-to-Ambient (typical socket mount)
θJA
Weight
1
SMPS IGBT
C
G
E
n-channel
Parameter
e
Parameter
IRGP50B60PD1
V
= 600V
CES
V
typ. = 2.00V
CE(on)
@ V
= 15V I
= 33A
GE
C
Equivalent MOSFET
Parameters

R
typ. = 61mΩ
CE(on)
I
(FET equivalent) = 50A
D
TO-247AC
Max.
600
75
45
150
150
40
15
60
±20
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
Typ.
Max.
–––
–––
0.32
–––
–––
1.7
–––
0.24
–––
–––
–––
40
–––
6.0 (0.21)
–––
www.irf.com
E
C
G
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1/25/06

IRGP50B60PD1 Summary of contents