IRLML6402

Manufacturer Part NumberIRLML6402
ManufacturerInternational Rectifier Corp.
IRLML6402 datasheet
 
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Ultra Low On-Resistance
P-Channel MOSFET
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SOT-23 Footprint
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Low Profile (<1.1mm)
Available in Tape and Reel
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Fast Switching
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Parameter
V
Drain- Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
E
Single Pulse Avalanche Energy„
AS
V
Gate-to-Source Voltage
GS
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambientƒ
θJA
www.irf.com
HEXFET Power MOSFET
D
G
S
®
Max.
@ -4.5V
GS
@ -4.5V
GS
0.01
± 12
-55 to + 150
Typ.
75
V
= -20V
DSS
R
= 0.065Ω
DS(on)
Micro3™
Units
-20
V
-3.7
-2.2
A
-22
1.3
0.8
W/°C
11
mJ
V
°C
Max.
Units
100
1
08/11/04

IRLML6402 Summary of contents