IRLU120N International Rectifier Corp., IRLU120N Datasheet
IRLU120N
Available stocks
Related parts for IRLU120N
IRLU120N Summary of contents
Page 1
... Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ...
Page 2
IRLR/U120N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 0.1 0 Fig 1. Typical Output Characteristics 0 and -to ...
Page 4
IRLR/U120N 800 iss rss oss 600 is s 400 C ...
Page 5
ase T em perature (° Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 ...
Page 6
IRLR/U120N 10V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
Page 7
D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt Test Circuit ...
Page 8
IRLR/U120N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) ...
Page 9
Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) ...
Page 10
IRLR/U120N Tape & Reel Information TO-252AA ...
Page 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...