K4S641633H Samsung, K4S641633H Datasheet

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... Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use. GENERAL DESCRIPTION The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy ...

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... K4S641633H - R(B)E/N/G/C/L/F FUNCTIONAL BLOCK DIAGRAM Bank Select CLK ADD LCKE LRAS LCBR LWE CLK CKE CS Data Input Register Column Decoder Latency & Burst Length Programming Register LCAS LWCBR Timing Register RAS CAS WE L(U)DQM 2 Mobile-SDRAM LWE LDQM ...

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... K4S641633H - R(B)E/N/G/C/L/F Package Dimension and Pin Configuration *1 < Bottom View E/2 *2: Top View *1: Bottom View *2 < Top View > #A1 Ball Origin Indicator > VSS B DQ14 C DQ12 D DQ10 E DQ8 F UDQM VSS ...

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... K4S641633H - R(B)E/N/G/C/L/F ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage temperature Power dissipation Short circuit current NOTES: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. ...

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... K4S641633H - R(B)E/N/G/C/L/F DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to V Parameter Symbol Operating Current I CC1 (One Bank Active) CKE ≤ CC2 Precharge Standby Current in power-down mode PS CKE & CLK ≤ CC2 CKE ≥ CC2 Input signals are changed one time during 20ns ...

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... K4S641633H - R(B)E/N/G/C/L/F AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition VDDQ 1200Ω VOH (DC) = 2.4V, IOH = -2mA Output VOL (DC) = 0.4V, IOL = 2mA 30pF 870Ω Figure 1. DC Output Load Circuit = 2.7V ∼ ...

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... K4S641633H - R(B)E/N/G/C/L/F OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to row precharge Last data in to Active delay Last data in to new col. address delay Last data in to burst stop Col ...

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... K4S641633H - R(B)E/N/G/C/L/F AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CLK cycle time CAS latency=3 CLK cycle time CAS latency=2 CLK cycle time CAS latency=1 CLK to valid output delay CAS latency=3 CLK to valid output delay CAS latency=2 CLK to valid output delay CAS latency=1 ...

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... K4S641633H - R(B)E/N/G/C/L/F SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable ...

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... K4S641633H - R(B)E/N/G/C/L/F A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with Normal MRS BA0 ~ BA1 Address A11 ~ A10/AP "0" Setting for Function RFU Normal MRS Normal MRS Mode Test Mode CAS Latency A8 A7 Type Mode Register Set Reserved ...

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... K4S641633H - R(B)E/N/G/C/L/F Partial Array Self Refresh 1. In order to save power consumption, Mobile SDRAM has PASR option. 2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array. BA1=0 BA1=0 BA0=0 BA0=1 BA1=1 BA1=1 BA0=0 BA0=1 - Full Array Internal Temperature Compensated Self Refresh (TCSR order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the two temperature range : Max 40 ° ...

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... K4S641633H - R(B)E/N/G/C/L/F C. BURST SEQUENCE 1. BURST LENGTH = 4 Initial Address BURST LENGTH = 8 Initial Address ...