LM5101M National Semiconductor, LM5101M Datasheet

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LM5101M

Manufacturer Part Number
LM5101M
Description
Manufacturer
National Semiconductor
Datasheet

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© 2004 National Semiconductor Corporation
LM5100/LM5101
High Voltage High Side and Low Side Gate Driver
General Description
The LM5100/LM5101 High Voltage Gate Drivers are de-
signed to drive both the high side and the low side
N-Channel MOSFETs in a synchronous buck or a half bridge
configuration. The floating high-side driver is capable of
operating with supply voltages up to 100V. The outputs are
independently controlled with CMOS input thresholds
(LM5100) or TTL input thresholds (LM5101). An integrated
high voltage diode is provided to charge the high side gate
drive bootstrap capacitor. A robust level shifter operates at
high speed while consuming low power and providing clean
level transitions from the control logic to the high side gate
driver. Under-voltage lockout is provided on both the low
side and the high side power rails. This device is available in
the standard SOIC-8 pin and the LLP-10 pin packages.
Features
n Drives both a high side and low side N-Channel
n Independent high and low driver logic inputs (TTL for
Simplified Block Diagram
MOSFET
LM5101 or CMOS for LM5100)
DS200888
FIGURE 1.
n Bootstrap supply voltage range up to 118V DC
n Fast propagation times (25 ns typical)
n Drives 1000 pF load with 15 ns rise and fall times
n Excellent propagation delay matching (3 ns typical)
n Supply rail under-voltage lockouts
n Low power consumption
n Pin compatible with HIP2100/HIP2101
Typical Applications
n Current Fed push-pull converters
n Half and Full Bridge power converters
n Synchronous buck converters
n Two switch forward power converters
n Forward with Active Clamp converters
Package
n SOIC-8
n LLP-10 (4 mm x 4 mm)
20088803
January 2004
www.national.com

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LM5101M Summary of contents

Page 1

... Independent high and low driver logic inputs (TTL for LM5101 or CMOS for LM5100) Simplified Block Diagram © 2004 National Semiconductor Corporation n Bootstrap supply voltage range up to 118V DC n Fast propagation times (25 ns typical) n Drives 1000 pF load with 15 ns rise and fall times ...

Page 2

Connection Diagrams Ordering Information Ordering Number Package Type LM5100/01M SOIC-8 LM5100/01MX SOIC-8 LM5100/01SD LLP-10 LM5100/01SDX LLP-10 Pin Description Pin # Name SO-8 LLP- Positive gate drive supply High side gate driver bootstrap rail ...

Page 3

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications Inputs LO Output HO Output Junction Temperature Electrical Characteristics Specifications in standard typeface are for T perature range ...

Page 4

Electrical Characteristics Specifications in standard typeface are for T perature range. Unless otherwise specified, V Symbol Parameter HO GATE DRIVER V High-Level Output Voltage OHH I Peak Pullup Current OHH I Peak Pulldown Current OLH THERMAL RESISTANCE θ Junction to ...

Page 5

Switching Characteristics Specifications in standard typeface are for T perature range. Unless otherwise specified, V Symbol Parameter LM5101 t Minimum Input Pulse Width that PW Changes the Output t Bootstrap Diode Turn-Off Time BS Note 1: Absolute Maximum Ratings indicate ...

Page 6

Typical performance Characteristics LM5100 I vs Frequency DD LM5100/LM5101 Operating Current vs Temperature Quiescent Current vs Supply Voltage www.national.com LM5101 I 20088809 IHB vs Frequency 20088811 LM5100/LM5101 Quiescent Current vs Temperature 20088818 6 vs Frequency DD 20088810 20088814 20088819 ...

Page 7

Typical performance Characteristics Undervoltage Rising Thresholds vs Temperature Bootstrap Diode Forward Voltage LO and HO Gate Drive — High Level Output Voltage vs Temperature (Continued) LM5100 Undervoltage Threshold Hysteresis vs 20088822 HO and LO Peak Output Current vs Output Voltage ...

Page 8

Typical performance Characteristics LM5100 Propagation Delay vs Temperature www.national.com (Continued) LM5101 Propagation Delay vs Temperature 20088812 8 20088813 ...

Page 9

Timing Diagram Layout Considerations The optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout. Following points are emphasized low ESR / ESL capacitor must be connected close ...

Page 10

Power Dissipation Considerations (Continued) The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these ...

Page 11

Physical Dimensions inches (millimeters) unless otherwise noted Controlling dimension is inch. Values are millimeters. Notes: Unless otherwise specified. 1. Standard lead finish to be 200 microinches/5.08 micrometers minimum lead/tin (solder) on copper. 2. Dimension does not include ...

Page 12

... Physical Dimensions Notes: Unless otherwise specified. 1. For solder thickness and composition, see “Solder Information” in the packaging section of the National Semiconductor web page (www.national.com). 2. Maximum allowable metal burr on lead tips at the package edges is 76 microns JEDEC registration as of May 2003. ...

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