MBRS360 ON Semiconductor, MBRS360 Datasheet
MBRS360
Manufacturer Part Number
MBRS360
Description
Manufacturer
ON Semiconductor
Datasheet
1.MBRS360.pdf
(4 pages)
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MBRS360T3
Surface Mount
Schottky Power Rectifier
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
Mechanical Characteristics
•
•
•
•
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Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 4
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
Storage Temperature Range
Operating Junction Temperature
This device employs the Schottky Barrier principle in a large area
Leads are Readily Solderable
260°C Max. for 10 Seconds
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
Pb−Free Package is Available
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead and Mounting Surface Temperature for Soldering Purposes:
Polarity: Notch in Plastic Body Indicates Cathode Lead
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model, A
Junction−to−Ambient: dP
Working Peak Reverse Voltage
DC Blocking Voltage
(Surge applied at rated load
conditions halfwave, single
phase, 60 Hz)
(Note 1)
Rating
Human Body Model, 1B
D
/dT
Preferred Devices
J
< 1/R
qJA
Symbol
V
V
I
I
F(AV)
.
T
FSM
RWM
V
RRM
T
stg
R
J
3.0 @ T
4.0 @ T
− 65 to +175
− 65 to +175
Value
125
60
L
L
= 137°C
= 127°C
1
Unit
°C
°C
V
A
A
MBRS360T3G
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MBRS360T3
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
3.0 AMPERES, 60 VOLTS
SCHOTTKY BARRIER
ORDERING INFORMATION
B36
A
Y
WW
G
(Note: Microdot may be in either location)
MARKING DIAGRAM
http://onsemi.com
RECTIFIERS
(Pb−Free)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Package
CASE 403
PLASTIC
SMC
SMC
AYWW
SMC
B36G
Publication Order Number:
G
2500/Tape & Reel
2500/Tape & Reel
Shipping
MBRS360T3/D
†
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MBRS360 Summary of contents
Page 1
... Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRS360T3/D † ...
Page 2
... T = 100°C J 100E−6 10E− 25°C J 1E−6 100E− REVERSE VOLTAGE (V) R Figure 3. Typical Reverse Current MBRS360T3 10 1 0.1 = 25°C J 0.01 0.6 0.8 0 MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) F 1E+0 100E−3 10E−3 1E−3 100E−6 10E−6 1E−6 100E− ...
Page 3
... 105 T , LEAD TEMPERATURE (°C) L Figure 5. Current Derating 1000 100 10 0 100 D = 0.5 0.2 10 0.1 0.05 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 MBRS360T3 3.5 freq = 20 kHz 2.5 2 1.5 1 0.5 0 125 145 165 0 0 Figure 6. Forward Power Dissipation REVERSE VOLTAGE (V) R Figure 7 ...
Page 4
... REF 0.020 REF mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRS360T3/D ...