MP4410

Manufacturer Part NumberMP4410
ManufacturerTOSHIBA Semiconductor CORPORATION
MP4410 datasheet
 


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TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L
High Power, High Speed Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
4-V gate drivability
Small package by full molding (SIP 12 pin)
High drain power dissipation (4-device operation)
: P
= 28 W (Tc = 25°C)
T
Low drain-source ON resistance: R
Low leakage current: I
= ±10 μA (max) (V
GSS
I
= 100 μA (max) (V
DSS
Enhancement-mode: V
= 0.8 to 2.0 V (I
th
Absolute Maximum Ratings
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Peak drain current
Drain power dissipation
(1-device operation)
Ta = 25°C
Drain power dissipation
(4-device operation)
Tc = 25°C
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
2
3
4
5
1
8
6
MP4410
= 0.12 Ω (typ.)
DS (ON)
= ±16 V)
GS
= 60 V)
DS
= 1 mA)
D
(Ta = 25°C)
Symbol
Rating
Unit
V
60
V
DSS
V
±20
V
GSS
I
5
A
D
I
20
A
DP
P
2.2
W
D
4.4
P
W
T
28
T
150
°C
ch
T
−55 to 150
°C
stg
9
10
11
12
7
1
MP4410
2
-π-MOSV in One)
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1D
Weight: 3.9 g (typ.)
2006-10-27

MP4410 Summary of contents