MP6404

Manufacturer Part NumberMP6404
ManufacturerTOSHIBA Semiconductor CORPORATION
MP6404 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (215Kb)Embed
Next
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (6-device operation)
: P
= 36 W (Tc = 25°C)
T
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
= ±10 μA (max) (V
GSS
I
= 100 μA (max) (V
DSS
Enhancement-mode: V
= 0.8 V to 2.0 V (V
th
Absolute Maximum Ratings
Characteristics
Drain-source voltage
Drain-gate voltage (R
= 20 kΩ)
GS
Gate-source voltage
DC
Drain current
Pulse
Drain power dissipation
(1-device operation, Ta = 25°C)
Ta = 25°C
Drain power dissipation
(6-device operation)
Tc = 25°C
Single pulse avalanche energy
(Note 1)
Avalanche current
1 device
operation
Repetitive avalanche
energy
(Note 2) 6 device
operation
Channel temperature
Storage temperature range
Note 1: Condition for avalanche energy (single pulse)
Nch: V
= 25 V, starting T
DD
Pch: V
= −25 V, starting T
DD
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
MP6404
= 120 mΩ (typ.) (Nch)
DS (ON)
160 mΩ (typ.) (Pch)
| = 5.0 S (typ.) (Nch)
fs
4.0 S (typ.) (Pch)
= ±16 V)
GS
= 60 V)
DS
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Rating
Symbol
Unit
Nch
Pch
V
60
−60
V
DSS
V
60
−60
V
DGR
V
±20
±20
V
GSS
I
5
−5
D
A
I
20
−20
DP
P
2.2
W
D
4.4
P
W
DT
36
E
129
273
mJ
AS
I
5
−5
A
AR
E
0.22
AR
mJ
E
0.44
ART
T
150
°C
ch
T
−55 to 150
°C
stg
= 25°C, L = 7 mH, R
= 25 Ω, I
ch
G
= 25°C, L = 14.84 mH, R
ch
G
1
MP6404
2
-π-MOSV inOne)
Industrial Applications
JEDEC
JEITA
TOSHIBA
2-32C1K
Weight: 3.9 g (typ.)
= 5 A
AR
= 25 Ω, I
= −5 A
AR
2006-10-27
Unit: mm

MP6404 Summary of contents