MP6404 TOSHIBA Semiconductor CORPORATION, MP6404 Datasheet

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MP6404

Manufacturer Part Number
MP6404
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MP6404
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
Absolute Maximum Ratings
This transistor is an electrostatic-sensitive device. Please handle with caution.
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (6-device operation)
: P
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
(1-device operation, Ta = 25°C)
Drain power dissipation
(6-device operation)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche
energy
Channel temperature
Storage temperature range
Note 1: Condition for avalanche energy (single pulse)
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L
T
= 36 W (Tc = 25°C)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Nch: V
Pch: V
(Note 2) 6 device
GS
DD
DD
= 20 kΩ)
I
= −25 V, starting T
DC
Pulse
Ta = 25°C
Tc = 25°C
1 device
operation
operation
= 25 V, starting T
GSS
DSS
th
= 0.8 V to 2.0 V (V
(Note 1)
= ±10 μA (max) (V
= 100 μA (max) (V
160 mΩ (typ.) (Pch)
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
E
fs
E
P
E
T
ch
I
I
T
DGR
GSS
P
DSS
ART
I
DP
AR
ch
| = 5.0 S (typ.) (Nch)
DT
AS
AR
stg
D
ch
D
= 25°C, L = 7 mH, R
MP6404
= 25°C, L = 14.84 mH, R
= 120 mΩ (typ.) (Nch)
4.0 S (typ.) (Pch)
DS
GS
DS
= 10 V, I
= ±16 V)
= 60 V)
Nch
±20
129
60
60
20
−55 to 150
5
5
Rating
0.22
0.44
150
2.2
4.4
36
1
D
Pch
−60
−60
±20
−20
273
−5
−5
= 1 mA)
G
= 25 Ω, I
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
G
= 25 Ω, I
AR
= 5 A
AR
Weight: 3.9 g (typ.)
JEDEC
JEITA
TOSHIBA
= −5 A
Industrial Applications
2
-π-MOSV inOne)
2-32C1K
2006-10-27
MP6404
Unit: mm

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MP6404 Summary of contents

Page 1

... E 0. 0.44 ART T 150 ° −55 to 150 °C stg = 25° mH Ω 25° 14.84 mH MP6404 2 -π-MOSV inOne) Industrial Applications JEDEC ― JEITA ― TOSHIBA 2-32C1K Weight: 3.9 g (typ Ω − 2006-10-27 Unit: mm ...

Page 2

... Thermal resistance of channel to ambient (6-device operation 25°C) Thermal resistance of channel to case (6-device operation 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for Symbol Max Unit ΣR 28.4 °C/W th (ch-a) ΣR 3.47 °C/W th (ch-c) T 260 ° MP6404 2006-10-27 ...

Page 3

... Symbol Test Condition I ― ― DRP DSF / A/μ MP6404 Min Typ. Max ― ― ±10 ― ― 100 60 ― ― 0.8 ― 2.0 ― 0.21 0.32 ― 0.12 0.16 3.0 5.0 ― ― 370 ― ...

Page 4

... − / A/μ Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 4 MP6404 Min Typ. Max ― ― ±10 ― ― −100 −60 ― ― −0.8 ― −2.0 ― 0.24 0.28 ― ...

Page 5

... Tc = 25°C 8 4 Drain-source voltage V ( – Common source Tc = 25° 2 Gate-source voltage V ( – (ON Common source Tc = 25°C 0 Drain current I (A) D 2006-10-27 MP6404 ...

Page 6

... C iss 1.5 C oss 1.0 C rss 0 100 0 −80 ( (nC MP6404 I – −1 V Common source Tc = 25°C −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 Drain-source voltage V ( – Common source − ...

Page 7

... Common source Tc = 25° −5 A −4 −3 −2 −1 −4 −8 −12 −16 Gate-source voltage V ( – (ON) D Common source Tc = 25° −4 V −10 −0.3 −0.5 −1 −3 −5 −10 Drain current I (A) D 2006-10-27 MP6404 −10 −20 −30 ...

Page 8

... −48 V −8 − (nC – Common source Tc = 25°C −10 −3 − 0.4 0.8 1.2 1.6 Drain-source voltage V ( – Common source − −1 mA − 120 Case temperature Tc (°C) 2006-10-27 MP6404 2.0 160 ...

Page 9

... Pulse width t ( MP6404 ΔT – (3) (4) Circuit board Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 6-device operation ...

Page 10

... VDSS ⎜ ⎟ · ⎜ ⎟ − 14.84 mH − ⎝ ⎠ VDSS DD 10 MP6404 Safe Operating Area (Applicable to Pch MOS FET max 10 μs* 100 μs* 10 ms* 1 ms* 100 ms 25°C −3 −10 −30 Drain-source voltage V ( – ...

Page 11

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 MP6404 20070701-EN 2006-10-27 ...

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