MRF9045R1 Motorola, MRF9045R1 Datasheet

no-image

MRF9045R1

Manufacturer Part Number
MRF9045R1
Description
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
28 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 28 Volts
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 7
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
Output Power
40µ″ Nominal.
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — –32 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9045R1
MRF9045LSR1
MRF9045R1
MRF9045LSR1
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
MRF9045LSR1
MRF9045R1
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 360B–05, STYLE 1
CASE 360C–05, STYLE 1
945 MHz, 45 W, 28 V
M1 (Minimum)
MRF9045R1 MRF9045LSR1
1 (Minimum)
–65 to +150
BROADBAND
–0.5, +15
MRF9045LSR1
Class
Value
MRF9045R1
0.71
Max
125
175
200
1.4
1.0
65
NI–360S
1
NI–360
Order this document
by MRF9045/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

Related parts for MRF9045R1

MRF9045R1 Summary of contents

Page 1

... LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF9045R1 CASE 360C–05, STYLE 1 NI–360S MRF9045LSR1 Value Unit 65 Vdc –0.5, +15 Vdc 125 Watts 0.71 W/°C 175 1 °C –65 to +150 °C 200 Max Unit °C/W 1.4 1.0 Class 1 (Minimum) M1 (Minimum) MRF9045R1 MRF9045LSR1 1 ...

Page 2

... Adc DYNAMIC CHARACTERISTICS Input Capacitance = 28 Vdc ± 30 mV(rms) MHz Output Capacitance = 28 Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance = 28 Vdc ± 30 mV(rms) MHz MRF9045R1 MRF9045LSR1 2 = 25°C unless otherwise noted) Symbol Min I — DSS I — DSS I — GSS V 2 ...

Page 3

... G — 18.5 ps η — IMD — –33 IRL — P — 1dB G — ps η — Ψ No Degradation In Output Power Max Unit — — % –28 dBc –9 dB — — % — dBc 13 — — — — % MRF9045R1 MRF9045LSR1 3 ...

Page 4

... Microstrip Z3 0.260″ x 0.320″ Microstrip Figure 1. 930 – 960 MHz Broadband Test Circuit Schematic Figure 2. 930 – 960 MHz Broadband Test Circuit Component Layout MRF9045R1 MRF9045LSR1 4 Z4 0.360″ x 0.320″ Microstrip Z5 0.240″ x 0.320″ x 0.620″, Taper Z6 0.140″ ...

Page 5

... Figure 3. Class AB Broadband Circuit Performance Figure 4. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS h Figure 5. Intermodulation Distortion versus Figure 7. Power Gain, Efficiency versus Output Power h Output Power MRF9045R1 MRF9045LSR1 5 ...

Page 6

... Z source Z load Figure 8. Series Equivalent Input and Output Impedance MRF9045R1 MRF9045LSR1 6 Ω source load Ω Ω MHz 930 1.02 + j0.06 2.6 + j0.20 945 1.10 + j0.11 2.6 + j0.16 960 1.15 + j0.25 2.6 + j0.10 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground source load MOTOROLA RF DEVICE DATA ...

Page 7

... CASE 360C–05 ISSUE D NI–360S MRF9045LSR1 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF9045R1 MRF9045LSR1 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors ◊ MRF9045R1 MRF9045LSR1 8 MOTOROLA RF DEVICE DATA MRF9045/D ...

Related keywords