MT46H64M16LFCK-6 Micron Semiconductor Products, MT46H64M16LFCK-6 Datasheet
MT46H64M16LFCK-6
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MT46H64M16LFCK-6 Summary of contents
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Mobile DDR SDRAM MT46H64M16LF – 16 Meg banks MT46H32M32LF – 8 Meg banks Features • 1.70–1.95V DD/ DD • Bidirectional data strobe per byte of data (DQS) • ...
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Table of Contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of Figures Figure 1: 1Gb Mobile DDR Part Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of Tables Table 1: Key Timing Parameters ( ...
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Figure 1: 1Gb Mobile DDR Part Numbering Micron Technology Product family 46 = Mobile DDR SDRAM Operating voltage H = 1.8/1.8V Configuration 64 Meg Meg x 32 Addressing LF = Mobile standard addressing LG = Reduced page-size ...
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Functional Block Diagrams Figure 2: Functional Block Diagram (64 Meg x 16) CKE CK# CK CS# Control logic WE# CAS# Refresh RAS# counter Standard mode register Extended mode register address Address address BA0, BA1 register PDF: 09005aef82ce3074/Source: 09005aef82cd0158 1gb_ddr_mobile_sdram_t48m_density__2.fm - ...
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Figure 3: Functional Block Diagram (32 Meg x 32) CKE CK# CK Control CS# logic WE# CAS# RAS# Refresh counter Standard mode register Extended mode register address Address, Address BA0, BA1 register PDF: 09005aef82ce3074/Source: 09005aef82cd0158 1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/08 ...
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Ball Assignments and Descriptions Figure 4: 60-Ball VFBGA Assignments – 10mm x 11.5mm (Top View Notes test pin that must be tied to V PDF: 09005aef82ce3074/Source: ...
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Figure 5: 90-Ball VFBGA Ball Assignments – 10mm x 13mm (Top View Notes test pin that must be tied to V ...
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Table 3: VFBGA Ball Descriptions 60-Ball VFBGA 90-Ball VFBGA G2 G9, G8, G7 G9, G8, G7 F2, F8 K8, K2, F8, F2 H8, H9 H8, H9 J8, J9, K7, K8, K2, J8, J9, ...
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Table 3: VFBGA Ball Descriptions (Continued) 60-Ball VFBGA 90-Ball VFBGA A7, B1, C9, D1, A7, B1, C9, D1, E9 E9, L9, M1, N9, P1, R7 A3, B9, C1, E1 A3, B9, C1, E1, L1, M9, N1, P9, R3 A9, F9, ...
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Package Dimensions Figure 6: 60-Ball VFBGA Package Seating plane 0 60X Ø0.45 10 ±0.1 Dimensions apply to solder balls post-reflow. The pre-reflow balls are Ø0.42 on Ø0.4 SMD ball pads. 3.6 7.2 0.8 TYP 0.8 ...
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Figure 7: 90-Ball VFBGA Package Seating plane A 0.1 A 90X Ø0.45 Dimensions apply to solder balls post-reflow. The pre-reflow balls are Ø0.42 on Ø0 SMD ball pads. 5.6 11.2 0.8 TYP 3.2 Notes: 1. All dimensions ...
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Electrical Specifications Stresses greater than those listed in Table 4 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the ...
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Table 5: AC/DC Electrical Characteristics and Operating Conditions (Continued) Notes: 1–5 apply to all parameters/conditions in this table; V Parameter/Condition Operating temperature Commercial Industrial Notes: 1. All voltages referenced All parameters assume proper device initialization. 3. Tests ...
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Table 6: Capacitance (x16, x32) Note 1 applies to all the parameters in this table Parameter Input capacitance: CK, CK# Delta input capacitance: CK, CK# Input capacitance: command and address Delta input capacitance: command and address Input/output capacitance: DQs, DQS, ...
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Table 7: I Specifications and Conditions (x16) DD Notes: 1–5 apply to all the parameters/conditions in this table; notes appear on page 19 1.70–1.95V DD DD Parameter/Condition Operating one bank active-precharge current ...
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Table 8: I Specifications and Conditions (x32) DD Notes: 1–5 apply to all parameters/conditions in this table; notes appear on page 19 1.70–1.95V DD DD Parameter/Condition Operating one bank active-precharge current ...
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Table Specifications and Conditions DD Notes: 1–5, 7, and 12; apply to all the parameters/conditions in this table; V Parameter/Condition Self refresh CKE = LOW (MIN); Address and control inputs are stable; ...
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Figure 8: Typical Self Refresh Current vs. Temperature 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 -40 -35 -30 -25 -20 -15 -10 PDF: 09005aef82ce3074/Source: 09005aef82cd0158 1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/ ...
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Table 10: Electrical Characteristics and Recommended AC Operating Conditions Notes: 1–9 apply to all the parameters in this table; V Parameter Access window of DQs from CK/CK Clock cycle time ...
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Table 10: Electrical Characteristics and Recommended AC Operating Conditions (Continued) Notes: 1–9 apply to all the parameters in this table; V Parameter Address and control input setup time (fast slew rate) Address and control input setup time (slow slew rate) ...
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For the half-strength driver with a nominal 10pF load, parameters in the same range. However, these parameters are not subject to production test but are estimated by design/characterization. Use ...
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READs and WRITEs with auto precharge must not be issued until prior to the internal PRECHARGE command being issued. 22. The refresh period equals 64ms. This equates to an average refresh rate of 7.8125µs. 23. This is not a ...
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Table 11: Target Output Drive Characteristics (Full Strength) Notes 1–2 apply to all values. Characteristics are specified under best and worst process variations/conditions Pull-Down Current (mA) Voltage (V) Min 0.00 0.00 0.10 2.80 0.20 5.60 0.30 8.40 0.40 11.20 0.50 ...
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Table 12: Target Output Drive Characteristics (Three-Quarter Strength) Notes 1–3 apply to all values. Characteristics are specified under best and worst process variations/conditions. Voltage (V) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 11.76 0.70 13.72 0.80 15.68 0.85 16.66 0.90 ...
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Table 13: Target Output Drive Characteristics (One-Half Strength) Notes 1–2 apply to all values. Characteristics are specified under best and worst process variations/conditions Voltage (V) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 10.16 0.85 10.80 0.90 10.80 0.95 ...
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Functional Description The Mobile DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the ...
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Commands Table 14 and Table 15 provide a quick reference of available commands. This is followed by a written description of each command. Three additional truth tables (Table 16 on page 36, Table 17 on page 37, and Table 18 ...
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DESELECT The DESELECT function (CS# HIGH) prevents new commands from being executed by the Mobile DDR SDRAM. Operations already in progress are not affected. NO OPERATION (NOP) The NO OPERATION (NOP) command is used to instruct the selected Mobile DDR ...
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READ The READ command is used to initiate a burst read access to an active row. The values on the BA0 and BA1 inputs select the bank; the address provided on inputs A[0:Ai] (where i = the most significant column ...
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DM input logic level appearing coincident with the data given DM signal is regis- tered LOW, the corresponding data will be written to memory; if the DM signal is regis- tered HIGH, the corresponding data inputs will be ...
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PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time ( whether one or all ...
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AUTO REFRESH AUTO REFRESH is used during normal operation of the Mobile DDR SDRAM and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAMs. The AUTO REFRESH command is nonpersistent and must be issued each time a refresh is required. ...
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DEEP POWER-DOWN The DEEP POWER-DOWN (DPD) command is used to enter DPD operating mode, which achieves maximum power reduction by eliminating the power of the memory array. Data will not be retained when the device enters DPD mode. The DPD ...
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Operations Table 16: Truth Table – Current State Bank n – Command to Bank n Notes: 1–6; notes appear below and on next page Current State CS# RAS# Any Idle ...
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The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Accessing mode register: Precharging all: 6. All states and sequences not shown ...
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Notes: 1. This table applies when CKE the previous state was self refresh), after down full initialization if the previous state was deep power-down). 2. This table describes alternate bank operation, except where noted (for example, the cur- ...
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Table 18: Truth Table – CKE Notes: 1–4 CKE CKE Current State Active power-down L L Deep power-down L L (Precharge) power-down L L Self refresh L H Active power-down L H Deep power-down ...
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Figure 14: Mobile DRAM Simplified State Diagram Power Power on applied PRE PREALL LMR LMR EMR WRITE WRITE A PRE ACT = ACTIVE AREF = AUTO REFRESH BST = BURST TERMINATE CKEH = Exit power-down CKEL = Enter power-down DPD ...
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Initialization The following sections provide detailed information covering device initialization, register definition, and device operation. Prior to normal operation, Mobile DDR SDRAMs must be powered up and initialized in a predefined manner. Initialization procedures, other than those specified, will result ...
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Figure 15: Initialize and Load Mode Registers ( ( ) ) CK LVCMOS HIGH LEVEL ( ( ) ) CKE ( ( ...
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Register Definition Mode Registers The mode registers are used to define the specific mode of operation of the Mobile DDR SDRAM. Two mode registers are used to specify the operational characteristics of the device: standard mode register and extended mode ...
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Burst Length (BL) Read and write accesses to the Mobile DDR SDRAM are burst oriented, with the burst length (BL) being programmable. The BL determines the maximum number of column locations that can be accessed for a given READ or ...
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Table 19: Burst Definition Table Burst Length Starting Column Address ...
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CAS Latency (CL) The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first output data. The latency can be set clocks, as shown in ...
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The extended mode register is programmed via the LOAD MODE REGISTER command with BA0 = 0 and BA1 = 1. Information in the extended mode register will be retained until it is programmed again, the device goes into deep power-down ...
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Figure 18: Extended Mode Register BA1 n Mode Register Definition 0 0 Standard mode register 0 1 Status register 1 0 Extended mode register 1 1 Reserved En ... E10 ...
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Figure 19: SRR Timing T0 T1 CK# CK Command 1 PRE NOP t RP Address BA0, BA1 DQS DQ Notes: 1. All banks must be idle prior to status register read. 2. NOP or DESELECT commands are required between LMR ...
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Figure 20: Status Register Definition DQ31..DQ16 DQ15 DQ14 DQ13 S31..S16 S15 S14 S13 31.. Reserved Density S15 S14 S13 Density 128Mb 256Mb 512Mb 1Gb ...
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A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by ...
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Data from any READ burst must be completed or truncated before a subsequent WRITE command can be issued. If truncation is necessary, the BURST TERMINATE command must be used, as shown in Figure 26 on page 57. A READ burst ...
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Figure 22: Consecutive READ Bursts T0 CK# CK Command READ Bank, Address Col n DQS DQ T0 CK# CK Command READ Bank, Address Col n DQS DQ Notes OUT (if 4, ...
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Figure 23: Nonconsecutive READ Bursts T0 CK# CK Command READ Bank, Address Col n DQS DQ T0 CK# CK Command READ Bank, Address Col n DQS DQ Notes OUT (if burst ...
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Figure 24: Random READ Accesses T0 CK# CK Command READ Bank, Address Col n DQS DQ T0 CK# CK Command READ Bank, Address Col n DQS DQ Notes OUT (if ...
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Figure 25: Terminating a READ Burst T0 CK# CK Command READ Banka, Address Col n DQS DQ T0 CK# CK Command READ Banka, Address Col n DQS DQ Notes: 1. Dout n = data-out from column ...
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Figure 26: READ-to-WRITE T0 CK# CK Command READ Bank, Address Col n DQS CK# CK Command READ Bank, Address Col n DQS DQ DM Notes OUT the ...
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Figure 27: READ-to-PRECHARGE T0 CK# CK Command READ Banka, Address Col n DQS DQ T0 CK# CK Command READ Banka, Address Col n DQS DQ Notes OUT interrupted burst ...
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Figure 28: Data Output Timing – CK LDQS DQ (Last data valid (First data no longer valid (Last data valid ...
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DQSQ is derived at each DQS clock edge and is not cumulative over time and begins with DQS transition and ends with the last valid DQ transition derived from the ...
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Figure 30: Data Output Timing – T0 CK# CK Command READ 1 DQS or LDQS/UDQS 2 All DQ values, collectively Notes transitioning after DQS transitions define 2. All DQ must transition the DQ ...
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WRITEs WRITE bursts are initiated with a WRITE command, as shown in Figure 11 on page 32. The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. ...
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Data for any WRITE burst may be truncated by a subsequent PRECHARGE command, as shown in Figure 41 on page 72 and Figure 42 on page 73. Note that only the data-in pairs that are registered prior to the subsequent ...
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Figure 32: Write – DM Operation CKE Command NOP ACTIVE Row Address A10 Row BA0, BA1 Bank ...
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Figure 33: WRITE Burst Command Address t DQSS (NOM) t DQSS (MIN) t DQSS (MAX) Notes uninterrupted burst shown. 3. A10 is LOW with the WRITE command (auto precharge is disabled). PDF: ...
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Figure 34: Consecutive WRITE-to-WRITE T0 CK# CK Command WRITE Bank, Address Col b t DQSS (NOM) DQS DQ DM Notes uninterrupted burst shown. 3. Each WRITE command may be to any bank. ...
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Figure 36: Random WRITE Cycles T0 CK# CK Command WRITE Bank, Address Col b t DQSS (NOM) DQS DQ DM Notes ( the next data-in following D burst order. 3. ...
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Figure 37: WRITE-to-READ – Uninterrupting T0 CK# CK Command WRITE Bank a, Address Col DQSS (NOM) DQSS DQS DQSS (MIN) DQSS DQS DQSS (MAX) DQSS DQS ...
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Figure 38: WRITE-to-READ – Interrupting T0 CK# CK Command WRITE Bank a, Address Col DQSS (NOM) DQSS DQS DQSS (MIN) DQSS DQS DQSS (MAX) DQSS DQS ...
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Figure 39: WRITE-to-READ – Odd Number of Data, Interrupting T0 CK# CK Command WRITE Bank a, Address Col DQSS (NOM) DQSS DQS DQSS (MIN) DQSS DQS ...
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Figure 40: WRITE-to-PRECHARGE – Uninterrupting T0 CK# CK Command WRITE Bank a, Address Col DQSS (NOM) DQSS DQS DQSS (MIN) t DQSS DQS DQSS (MAX) t DQSS DQS ...
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Figure 41: WRITE-to-PRECHARGE – Interrupting T0 CK# CK Command WRITE Bank a, Address Col DQSS (NOM) DQSS DQS DQSS (MIN) DQSS DQS DQSS (MAX) DQSS DQS ...
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Figure 42: WRITE-to-PRECHARGE – Odd Number of Data, Interrupting T0 CK# CK Command WRITE Bank a, Address Col b t DQSS t DQSS (NOM) DQS DQSS t DQSS (MIN) DQS DQSS ...
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Care.” After a bank has been precharged the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command will be treated as a NOP if there ...
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Figure 43: Bank Read – with Auto Precharge CKE Command ACTIVE NOP Address Row A10 Row ...
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Figure 44: Bank Read – Without Auto Precharge CKE Command 6 ACTIVE NOP Row Address A10 Row BA0, ...
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Figure 45: Bank Write – with Auto Precharge CKE Command ACTIVE NOP Address Row A10 Row ...
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Figure 46: Bank Write – Without Auto Precharge CKE Command ACTIVE NOP Address Row A10 Row ...
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Auto Refresh Auto refresh mode is used during normal operation of the Mobile DDR SDRAM and is analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAMs. The AUTO REFRESH command is nonpersistent and must be issued each time a refresh is ...
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Self Refresh The self refresh mode can be used to retain data in the Mobile DDR SDRAM even if the rest of the system is powered down. When in the self refresh mode, the Mobile DDR SDRAM retains data without ...
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Power-Down Power-down (Figure 49 on page 81) is entered when CKE is registered LOW. If power- down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active ...
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Figure 50: Power-Down Mode (Active or Precharge CKE Command 1 Valid Address Valid DQS READ/WRITE access in progress power-down Notes: ...
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Figure 51: Deep Power-Down T0 CK# CK CKE Command NOP All banks idle with no activity on the data bus Notes: 1. Clock must be stable prior to CKE going HIGH. 2. DPD = deep power-down. 3. Upon exit of ...
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Figure 52: Clock Stop Mode CK CKE ( ( ) ) Command ( ( ) ) ( ( ) ) Address ( ( ) ) ( ( ...
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Revision History: Device Rev ...
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Table 10, “Electrical Characteristics and Recommended AC Operating Conditions,” on page 21: Changed Rev ...
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Revision History: Commands, Operations, and Timing Diagrams Revision History: Commands, Operations, and Timing Diagrams Update . . . . . . . . . . . . . . . . . . . . . . . . . ...