MTP2N50E

Manufacturer Part NumberMTP2N50E
ManufacturerFreescale Semiconductor, Inc
MTP2N50E datasheets

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Data Sheet
TMOS
E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(T C = 25 C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
— Non–Repetitive (t p
Drain Current — Continuous
— Continuous @ 100 C
— Single Pulse (t p
10 s)
Total Power Dissipation
Derate above 25 C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
(V DD = 100 Vdc, V GS = 10 Vdc, I L = 3.5 Apk, L = 10 mH, R G = 25 )
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola TMOS Power MOSFET Transistor Device Data
 Motorola, Inc. 1995
D
G
10 ms)
Order this document
by MTP2N50E/D
MTP2N50E
Motorola Preferred Device
TMOS POWER FET
2.0 AMPERES
500 VOLTS
R DS(on) = 3.6 OHM
CASE 221A–06, Style 5
TO–220AB
S
Symbol
Value
Unit
V DSS
500
Vdc
V DGR
500
Vdc
V GS
20
Vdc
V GSM
40
Vpk
I D
2.0
Adc
I D
1.6
I DM
6.0
Apk
P D
75
Watts
0.6
W/ C
T J , T stg
– 55 to 150
C
E AS
61
mJ
R JC
1.67
C/W
R JA
62.5
T L
260
C
1

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