RD01MUS1 Mitsumi Electronics, Corp., RD01MUS1 Datasheet
RD01MUS1
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RD01MUS1 Summary of contents
Page 1
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 20 18 Ta=+25°C f=1MHz Vds(V) RD01MUS1 MITSUBISHI RF POWER MOS FET RD01MUS1 Vgs-Ids CHARACTERISTICS 1.0 Ta=+25°C Vds=10V 0.8 0.6 0.4 0.2 0 160 200 Vds VS. Ciss CHARACTERISTICS Vgs=10V 20 Vgs=9V 18 Ta=+25°C Vgs=8V f=1MHz Vgs= Vgs= ...
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... RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS - Pin(dBm) Vdd-Po CHARACTERISTICS 4.0 Ta=25°C 3.5 f=520MHz Pin=30mW Idq=100mA 3.0 Zg=ZI=50 ohm 2.5 2.0 1.5 1.0 0.5 0 Vdd(V) RD01MUS1 MITSUBISHI RF POWER MOS FET RD01MUS1 Pin-Po CHARACTERISTICS 2.0 100 1.8 90 1 1.2 70 1.0 60 0.8 0.6 50 Ta=+25°C f=520MHz 0.4 Vdd=7.2V 40 0.2 Idq=100mA 30 0 0.8 Po 0.7 0.6 0.5 Idd 0.4 0.3 0.2 0.1 0.0 ...
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... R F-IN 62pF 68O HM 24pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m 1,C2: 1000pF,0.022uF in parallel INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50: 520MHz Zin* RD01MUS1 MITSUBISHI RF POWER MOS FET RD01MUS1 Vdd 11m m 18m 01MUS1 L1 6.5m m 17. 5. 3pF ...
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... RD01MUS1 MITSUBISHI RF POWER MOS FET RD01MUS1 S21 S12 (mag) (ang) (mag) (ang) 19.536 132.3 0.043 41.3 15.657 116.5 0.050 26.5 12.662 105.0 0.053 16.1 10.427 96.2 ...
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... These results causes in fire or injury. RD01MUS1 MITSUBISHI RF POWER MOS FET RD01MUS1 warning ! MITSUBISHI ELECTRIC 6/6 10 Jan 2006 ...