RD07MVS1

Manufacturer Part NumberRD07MVS1
ManufacturerMitsumi Electronics, Corp.
RD07MVS1 datasheet
 
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS1
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
OUTLINE DRAWING
6.0+/-0.15
INDEX MARK
(Gate)
MITSUBISHI ELECTRIC
1/9
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
0.2+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
10 Jan 2006

RD07MVS1 Summary of contents