RD70HHF1 Mitsumi Electronics, Corp., RD70HHF1 Datasheet
RD70HHF1
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RD70HHF1 Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. FEATURES •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 500 Ta=+25°C f=1MHz 400 300 200 100 Vds(V) RD70HHF1 MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V 160 200 0 1 Vds VS. Ciss CHARACTERISTICS 300 Ta=+25°C f=1MHz ...
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... Vgs-Ids CHARACTORISTICS Vds=10V 25 Tc=-25~+75° Idd -25° MITSUBISHI ELECTRIC 3/7 RD70HHF1 Po 100 Ta=25°C 40 f=30MHz Vdd=12.5V Idq=1A Idd Pin(W) +25°C +75°C -25° Vgs(V) REV.5 2 APRIL. 2004 ...
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... L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire L3:5Turns,I.D6mm,D0.7mm copper wire P=0.5mm L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire RD70HHF1 MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W Vgg Vdd 330uF,50V C1 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=30MHz Zout Zin , Zout f Zin (MHz) (ohm) 30 5.28-j20.08 RD70HHF1 MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W Zo=10 f=30MHz Zin Zout (ohm) Conditions 0.77-j0.22 Po=97W, Vdd=12.5V,Pin=3.5W MITSUBISHI ELECTRIC 5/7 REV.5 2 APRIL. 2004 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. S11 [MHz] (mag) (ang) 10 0.837 -155.8 30 0.838 -170.6 50 0.842 -173.0 100 0.872 -174.1 150 0.899 -174.9 200 0.917 -175.9 250 0.931 -176.8 300 0.941 -177.7 350 0.950 -178.6 400 ...
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... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD70HHF1 MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W MITSUBISHI ELECTRIC 7/7 REV.5 2 APRIL. 2004 ...