STD5NM50 STMicroelectronics, STD5NM50 Datasheet

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STD5NM50

Manufacturer Part Number
STD5NM50
Description
Manufacturer
STMicroelectronics
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
STD5NM50
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD5NM50 D5NM50
Manufacturer:
ST
0
Part Number:
STD5NM50-1
Manufacturer:
ST
0
Part Number:
STD5NM50T4
Manufacturer:
ST
0
Part Number:
STD5NM50T4G
Manufacturer:
ST
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Part Number:
STD5NM50Z
Manufacturer:
ST
0
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DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
September 2002
STD5NM50
STD5NM50-1
TYPICAL R
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
dv/dt (1)
Symbol
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.7
500V
500V
V
DSS
R
N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK
<0.8
<0.8
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
7.5 A
7.5 A
= 25°C
= 100°C
I
D
(1) I
SD
MDmesh™Power MOSFET
INTERNAL SCHEMATIC DIAGRAM
5A, di/dt
TO-252
DPAK
1
400A/µs, V
3
– 55 to 150
STD5NM50-1
Value
DD
500
500
±30
100
7.5
4.7
0.8
30
15
STD5NM50
V
(Add Suffix “-1”)
(BR)DSS
TO-251
IPAK
, T
j
T
JMAX.
1
2
W/°C
V/ns
3
Unit
1/10
°C
W
V
V
V
A
A
A

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STD5NM50 Summary of contents

Page 1

... MDmesh™Power MOSFET R I DS(on) D <0.8 7.5 A <0.8 7.5 A INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° STD5NM50 STD5NM50 DPAK IPAK TO-252 TO-251 (Add Suffix “-1”) Value 500 500 ±30 7.5 4.7 30 100 0.8 15 – 150 5A, di/dt 400A/µ ...

Page 2

... STD5NM50/STD5NM50-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter ...

Page 3

... 5A, di/dt = 100A/µ 100V 25° (see test circuit, Figure 5A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedance STD5NM50/STD5NM50-1 Min. Typ. Max. Unit Min. Typ. Max. Unit 14 ns ...

Page 4

... STD5NM50/STD5NM50-1 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/10 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STD5NM50/STD5NM50-1 Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature 5/10 ...

Page 6

... STD5NM50/STD5NM50-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 STD5NM50/STD5NM50-1 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.031 1.00 0.024 MAX. 0.094 0.043 0.009 0.035 0.213 ...

Page 8

... STD5NM50/STD5NM50-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 8/10 TO-251 (IPAK) MECHANICAL DATA mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 0 inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.027 0.051 0.025 0.031 0.204 0.212 0.033 0.012 0.037 0.017 0.023 0.019 0.023 ...

Page 9

... STD5NM50/STD5NM50-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 ...

Page 10

... STD5NM50/STD5NM50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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