STD7NB20 STMicroelectronics, STD7NB20 Datasheet

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STD7NB20

Manufacturer Part Number
STD7NB20
Description
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
July 2002
STD7NB20
STD7NB20-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
dv/dt (1)
Symbol
I
V
DM
P
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.3
200 V
200 V
V
DSS
< 0.40
< 0.40
R
DS(on)
C
GS
Parameter
= 25° C
N-CHANNEL 200V - 0.3 - 7A DPAK/IPAK
GS
= 20 k )
DS(on)
= 0)
C
C
= 25°C
= 100° C
per area,
7 A
7 A
I
D
(1) I
SD
INTERNAL SCHEMATIC DIAGRAM
7A, di/dt 200 A/ s, V
PowerMESH™ MOSFET
TO-252
DPAK
1
3
– 65 to 150
DD
STD7NB20-1
Value
± 30
0.44
200
200
150
5.5
28
55
V
7
5
(BR)DSS
STD7NB20
, Tj T
TO-251
IPAK
jMAX
1
2
3
W/° C
Unit
V/ns
°C
°C
1/10
W
V
V
V
A
A
A

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STD7NB20 Summary of contents

Page 1

... PowerMESH™ MOSFET DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM per area, DS(on) Parameter = 25° 100° 25° C (1) I 7A, di/dt 200 STD7NB20 STD7NB20 IPAK TO-251 Value Unit 200 V 200 V ± 0.44 W/° ...

Page 2

... STD7NB20 / STD7NB20-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area STD7NB20 / STD7NB20-1 Test Conditions Min 100 4 ...

Page 4

... STD7NB20 / STD7NB20-1 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/10 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics STD7NB20 / STD7NB20-1 Normalized On Resistance vs Temperature 5/10 ...

Page 6

... STD7NB20 / STD7NB20-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... DIM. MIN. TYP A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 8 1.27 L3 1.4 M 2.4 R 0.4 V2 0º STD7NB20 / STD7NB20-1 inch MAX. MIN. TYP. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 0.315 10.4 0.393 0.334 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 3.2 0.094 0.015 8º MAX. 0.181 ...

Page 8

... STD7NB20 / STD7NB20-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 8/10 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 ...

Page 9

... STD7NB20 / STD7NB20-1 DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1 ...

Page 10

... STD7NB20 / STD7NB20-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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