TPCA8026 TOSHIBA Semiconductor CORPORATION, TPCA8026 Datasheet

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TPCA8026

Manufacturer Part Number
TPCA8026
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium-Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to a small and thin package
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25℃)
Drain power dissipation
Drain power dissipation
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
(Tc = 25℃) (Note 4)
GS
DC
Pulsed (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= 1.3 to 2.5 V (V
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= 10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
TPCA8026
fs
E
E
T
I
I
T
P
P
P
DGR
GSS
DSS
I
DP
AR
| =100 S (typ.)
AS
AR
stg
D
ch
D
D
D
DS
= 1.8 mΩ (typ.)
DS
= 10 V, I
= 30 V)
−55 to 150
Rating
±20
135
263
150
2.8
1.6
3.4
D
30
30
45
45
45
1
= 1 mA)
Unit
mJ
mJ
°C
°C
W
W
W
V
V
V
A
A
Weight: 0.069 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
1,2,3: SORCE
5,6,7,8:DRAIN
S
8
1
8
1
1
8
1.27
0.05
4.25 ± 0.2
5.0 ± 0.2
7
2
0.4 ± 0.1
S
2-5Q1A
TPCA8026
4: GATE
5
4
6
3
2008-06-26
4
5
0.05 M
0.15 ± 0.05
0.595
A
5
4
Unit: mm
A

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TPCA8026 Summary of contents

Page 1

... 2 1 263 3 150 °C ch −55 to 150 T °C stg 1 TPCA8026 Unit: mm 0.4 ± 0.1 1. 0.15 ± 0.05 4 0.595 1 A 5.0 ± 0.2 0. 4.25 ± 0 1,2,3: SORCE 4: GATE 5,6,7,8:DRAIN ⎯ JEDEC ⎯ JEITA TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) ...

Page 2

... Year of manufacture (The last digit of the year) Symbol Max R 2.78 °C/W th (ch-c) ( ℃ 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm TPCA8026 Unit FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2008-06-26 ...

Page 3

... Duty ≤ 1 μ ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8026 Min Typ. Max = 0 V ⎯ ⎯ ± 100 = 0 V ⎯ ⎯ 10 ⎯ 30 ⎯ 10 ⎯ 1.3 2.5 ⎯ 2.7 4.5 ⎯ 1.8 2.2 50 100 ⎯ ...

Page 4

... Drain-source voltage V 0.4 0.32 0.24 0.16 0. Gate − source voltage V (V) 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCA8026 I – 3.8 3.6 4.5 Common source Ta = 25°C Pulse test 3 – Common source Ta = 25°C ...

Page 5

... C oss C rss 1.5 1 Common source 0 1mA Pulse test 0 −80 −40 100 (V) Ambient temperature 160 180 5 TPCA8026 I – 4 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1 ( – ...

Page 6

... V DSS max temperature. 0.1 0 Drain − source voltage V DS − 0 Pulse width t ( 160 0 C) 100 (V) 6 TPCA8026 (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature ° 2008-06-26 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8026 20070701-EN GENERAL 2008-06-26 ...

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