MRFE6S9060NR1 Freescale Semiconductor, Inc, MRFE6S9060NR1 Datasheet
MRFE6S9060NR1
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MRFE6S9060NR1 Summary of contents
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... MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 270 - 2 PLASTIC Symbol Value Unit V - 0.5, +66 Vdc DSS Vdc GS V 32, +0 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.77 0.88 MRFE6S9060NR1 1 ...
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... Functional Tests (In Freescale Test Fixture, 50 ohm system CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss MRFE6S9060NR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol ...
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... Vdc 500 mA — 20 — — 63 — — — — 67 — = 450 mA, 865 - 900 MHz Bandwidth — 3 — — 0.27 — — 0.011 — — 0.088 — MRFE6S9060NR1 Unit dBc dBc MHz dB dB/°C dBm/°C 3 ...
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... Z6 0.280″ x 0.270″ x 0.530″ Taper Z7 0.087″ x 0.525″ Microstrip Z8 0.435″ x 0.525″ Microstrip Figure 1. MRFE6S9060NR1 Test Circuit Schematic Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values Part B1 Ferrite Bead B2 Ferrite Bead C1, C8, C14, C15 47 pF Chip Capacitors C2, C4, C13 0 ...
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... Figure 2. MRFE6S9060NR1 Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 B2 C8 C15 C11 C10 C16 C17 R4 C18 C12 C14 C13 TO−270/272 Surface / Bolt down MRFE6S9060NR1 5 ...
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... Vdc 880 MHz 880.1 MHz DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9060NR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 450 mA, N−CDMA IS−95 DQ Pilot, Sync, Paging, Traffic Codes 8 ...
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... Two−Tone Measurements IM5−U IM5− TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual = 450 −15 −20 −25 −30 −35 −30_C −40 25_C −45 −50 85_C −55 −30_C −60 −65 85_C −70 25_C −75 −80 100 MRFE6S9060NR1 80 7 ...
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... Vdc η 450 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9060NR1 8 TYPICAL CHARACTERISTICS 80 22 −30_C 70 21 25_C 60 85_C 100 200 Figure 12 ...
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... FREQUENCY (MHz) MRFE6S9060NR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...
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... 910 MHz Z source f = 850 MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRFE6S9060NR1 Ω 910 MHz Z load f = 850 MHz Vdc 450 mA Avg out source load MHz Ω Ω 850 0.44 - j0.20 2.28 + j0.23 865 0.44 - j0.07 2.18 + j0.33 880 0.45 + j0.50 2.20 + j0.47 895 0.48 + j0.18 2.15 + j0.61 910 ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9060NR1 11 ...
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... MRFE6S9060NR1 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9060NR1 13 ...
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... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 • Initial Release of Data Sheet 1 Oct. 2007 • Added Min value to V MRFE6S9060NR1 14 PRODUCT DOCUMENTATION REVISION HISTORY Description , On Characteristics table DS(on) RF Device Data Freescale Semiconductor ...
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... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRFE6S9060NR1 15 ...