MRF323 Motorola, MRF323 Datasheet

MRF323

Manufacturer Part Number

MRF323

Description

Manufacturer

Motorola

Datasheet

1.MRF323.pdf (6 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF Line

NPN Silicon

RF Power Transistor

. . . designed primarily for wideband large–signal driver and predriver amplifier

stages in the 200– 500 MHz frequency range.

NOTE:

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

ON CHARACTERISTICS

MOTOROLA RF DEVICE DATA

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Collector Current

Total Device Dissipation @ T C = 25 C (1)

Storage Temperature Range

Thermal Resistance, Junction to Case

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Motorola, Inc. 1994

Guaranteed Performance at 400 MHz, 28 V

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Gold Metallization System for High Reliability

Computer–Controlled Wirebonding Gives Consistent Input Impedance

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

Derate above 25 C

(I C = 20 mAdc, I B = 0)

(I C = 20 mAdc, V BE = 0)

(I C = 20 mAdc, I E = 0)

(I E = 2.0 mAdc, I C = 0)

(V CB = 30 Vdc, I E = 0)

(I C = 1.0 Adc, V CE = 5.0 Vdc)

Output Power = 20 Watts

Power Gain = 10 dB Min

Efficiency = 50% Min

— Peak

Rating

Characteristic

(T C = 25 C unless otherwise noted.)

Symbol

V CEO

V CBO

V EBO

T stg

P D

I C

– 65 to +150

Value

310

4.0

2.2

3.0

V (BR)CEO

V (BR)CBO

V (BR)CES

V (BR)EBO

Symbol

I CBO

h FE

mW/ C

Watts

Unit

Vdc

Adc

Symbol

R JC

Min

4.0

—

Typ

—

CASE 244–04, STYLE 1

MRF323

20 W, 400 MHz

TRANSISTOR

NPN SILICON

Max

RF POWER

3.2

Max

2.0

Order this document

—

by MRF323/D

(continued)

MRF323

mAdc

Unit

Vdc

C/W

—

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