K6R4016V1D-TI10 Samsung, K6R4016V1D-TI10 Datasheet
K6R4016V1D-TI10
Manufacturer Part Number
K6R4016V1D-TI10
Description
Manufacturer
Samsung
Datasheet
1.K6R4016V1D-TI10.pdf
(12 pages)
Specifications of K6R4016V1D-TI10
Case
TSOP
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K6R4016V1D
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 1.0
Rev. 2.0
Rev. 2.1
Rev. 2.2
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
History
Initial release with Preliminary.
Add Low Ver.
Package dimensions modify on page 11.
Change ICC , ISB, ISB1
1. Correct AC parameters : Read & Write Cycle
2. Change Data Retention Current :
3. Limit L-Ver. to 48 TBGA Package
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
1. Correct the Package dimensions(48-TBGA)
1. Add the tPU and tPD into the waveform.
I
CC(Commercial)
I
I
CC(Industrial)
CC(Industrial)
from 0.45mA to 1.1mA when Vcc=3.0V
from 0.35mA to 0.9mA when Vcc=2.0V
I
SB1(L-ver.)
Item
Item
I
SB
10ns
12ns
15ns
10ns
12ns
15ns
10ns
8ns
8ns
8ns
Previous
Previous
110mA
130mA
115mA
100mA
100mA
0.5mA
90mA
80mA
70mA
85mA
30mA
85mA
PRELIMPreliminaryPPPPPPPPPINARY
- 1 -
Current
Current
100mA
1.2mA
80mA
65mA
55mA
45mA
85mA
75mA
65mA
20mA
90mA
75mA
Aug. 20. 2001
Sep. 19. 2001
Sep. 28. 2001
Oct. 09. 2001
Nov.23. 2001
Dec.18. 2001
Feb. 14. 2002
Oct. 23. 2002
Mar. 10, 2003
Draft Data
CMOS SRAM
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Remark
Mar. 2003
Rev 2.2
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