M29W400BB-70N1 STMicroelectronics, M29W400BB-70N1 Datasheet

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M29W400BB-70N1

Manufacturer Part Number
M29W400BB-70N1
Description
Manufacturer
STMicroelectronics
Datasheet

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June 2001
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400BT: 00EEh
– Bottom Device Code M29W400BB: 00EFh
Erase Suspend
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
Figure 1. Logic Diagram
A0-A17
RP
TSOP48 (N)
12 x 20mm
W
G
E
18
44
M29W400BB
M29W400BT
V CC
V SS
SO44 (M)
1
M29W400BB
M29W400BT
TFBGA48 (ZA)
6 x 8 ball array
15
FBGA
DQ0-DQ14
DQ15A–1
BYTE
RB
AI02934
1/25

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