M29W400BB-70N1

Manufacturer Part NumberM29W400BB-70N1
ManufacturerSTMicroelectronics
M29W400BB-70N1 datasheet
 


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SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400BT: 00EEh
– Bottom Device Code M29W400BB: 00EFh
June 2001
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
TSOP48 (N)
Figure 1. Logic Diagram
A0-A17
RP
M29W400BT
M29W400BB
FBGA
TFBGA48 (ZA)
12 x 20mm
6 x 8 ball array
44
1
SO44 (M)
V CC
18
15
DQ0-DQ14
W
DQ15A–1
M29W400BT
E
BYTE
M29W400BB
G
RB
V SS
AI02934
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