STP30NF10FP STMicroelectronics, STP30NF10FP Datasheet

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STP30NF10FP

Manufacturer Part Number
STP30NF10FP
Description
N-Channel 100 V - 0.038 ohm - 35 A TO-220FP Low Gate Charge STripFETII Power MOSFET
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STP30NF10FP
Manufacturer:
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Part Number:
STP30NF10FP
Manufacturer:
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0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
May 2002
.
STB30NF10
STP30NF10
STP30NF10FP
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
Pulse width limited by safe operating area.
Symbol
dv/dt
N-CHANNEL 100V - 0.038
E
I
V
DM
V
V
V
P
AS (2)
T
DGR
I
I
T
ISO
GS
stg
DS
TYPE
D
D
tot
(
j
(1)
LOW GATE CHARGE STripFET™ II POWER MOSFET
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.038
100 V
100 V
100 V
V
DSS
Parameter
2
<0.045
<0.045
<0.045
PAK (TO-263)
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
35 A
35 A
18 A
= 25°C
= 100°C
I
D
STP30NF10 STP30NF10FP
- 35A TO-220/TO-220FP/D
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
STB30NF10
STP30NF10
SD
TO-220FP
0.77
------
140
115
35
25
30A, di/dt 400A/µs, V
j
= 25
-55 to 175
1
o
Value
C, I
2
± 20
100
100
275
28
3
D
= 15A, V
STP30NF10FP
TO-220
DD
STB30NF10
2000
DD
0.2
18
13
72
30
V
= 30V
(BR)DSS
1
2
3
, T
j
(Suffix “T4”)
TO-263
D
T
JMAX
2
PAK
2
W/°C
V/ns
1
Unit
PAK
mJ
°C
W
V
V
V
A
A
A
V
3
1/11

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STP30NF10FP Summary of contents

Page 1

... Peak Diode Recovery voltage slope AS (2) E Single Pulse Avalanche Energy V Insulation Withstand Voltage (DC) ISO T Storage Temperature stg T Operating Junction Temperature j ( Pulse width limited by safe operating area. May 2002 . STP30NF10 STP30NF10FP - 35A TO-220/TO-220FP DS(on TO-220FP INTERNAL SCHEMATIC DIAGRAM STB30NF10 STP30NF10 = 25° ...

Page 2

... STB30NF10 STP30NF10 STP30NF10FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ...

Page 3

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area for TO-220 STB30NF10 STP30NF10 STP30NF10FP Test Conditions 4 ...

Page 4

... STB30NF10 STP30NF10 STP30NF10FP Thermal Impedance Output Characteristics Transconductance 4/11 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STB30NF10 STP30NF10 STP30NF10FP Capacitance Variations Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature 5/11 ...

Page 6

... STB30NF10 STP30NF10 STP30NF10FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... DIM. MIN. TYP. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 8 1.27 L3 1 0° STB30NF10 STP30NF10 STP30NF10FP 2 D PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8° inch. TYP. TYP. ...

Page 8

... STB30NF10 STP30NF10 STP30NF10FP DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/11 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. MAX. 0.173 0.181 0.048 0.051 0.094 0.107 0.050 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 ...

Page 9

... TO-220FP MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ STB30NF10 STP30NF10 STP30NF10FP mm MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. ...

Page 10

... STB30NF10 STP30NF10 STP30NF10FP 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type 10/11 TUBE SHIPMENT (no suffix)* inch MAX. ...

Page 11

... STMicroelectronics. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STB30NF10 STP30NF10 STP30NF10FP The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners ...

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