STP36N05LFI

Manufacturer Part NumberSTP36N05LFI
DescriptionN-Channel Enhancement Mode Power MOS Transistor
ManufacturerSTMicroelectronics
STP36N05LFI datasheet
 
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TYPE
V
R
DSS
STP36N05L
50 V
< 0.04
STP36N05LFI
50 V
< 0.04
TYPICAL R
= 0.033
DS(on)
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
LOGIC LEVEL COMPATIBLE INPUT
o
175
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Drain-source Voltage (V
DS
V
Drain- gate Voltage (R
DGR
V
Gate-source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
I
( )
Drain Current (pulsed)
DM
P
Total Dissipation at T
tot
Derating Factor
V
Insulation Withstand Voltage (DC)
ISO
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
November 1996
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
DS(on)
D
36 A
21 A
o
C
INTERNAL SCHEMATIC DIAGRAM
= 0)
GS
= 20 k )
GS
o
= 25
C
c
o
= 100
C
c
o
= 25
C
c
STP36N05L
STP36N05LFI
3
2
1
TO-220
ISOWATT220
Value
STP36N05L
STP36N05LFI
50
50
15
36
21
25
14
144
144
120
40
0.8
0.27
2000
-65 to 175
175
3
2
1
Unit
V
V
V
A
A
A
W
o
W/
C
V
o
C
o
C
1/10

STP36N05LFI Summary of contents

  • Page 1

    ... DS(on INTERNAL SCHEMATIC DIAGRAM = 100 STP36N05L STP36N05LFI TO-220 ISOWATT220 Value STP36N05L STP36N05LFI 144 144 120 40 0.8 0.27 2000 -65 to 175 175 Unit ...

  • Page 2

    STP36N05L/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width ...

  • Page 3

    ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time d(on) t Rise Time r (di/dt) Turn-on Current Slope on Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise ...

  • Page 4

    STP36N05L/FI Thermal Impedance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

  • Page 5

    Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP36N05L/FI 5/10 ...

  • Page 6

    STP36N05L/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

  • Page 7

    Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit ...

  • Page 8

    STP36N05L/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL ...

  • Page 9

    ISOWATT220 MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 Ø mm MAX. ...

  • Page 10

    STP36N05L/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from ...