STP9NK60ZFD STMicroelectronics, STP9NK60ZFD Datasheet - Page 2

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STP9NK60ZFD

Manufacturer Part Number
STP9NK60ZFD
Description
N-Channel 600 V-0.85 ohm-7 A TO-220 Fast Diode SuperMESH MOSFET
Manufacturer
STMicroelectronics
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
STP9NK60ZFDFP
Manufacturer:
MOSPEC
Quantity:
25 000
Part Number:
STP9NK60ZFDFP
Manufacturer:
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/9
V
Rthj-case
Rthj-amb
Rthj-pcb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
7A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
DD
j
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
, T
= I
= 25°C
GS
j
j
= 20 k )
max)
AR
Parameter
T
= 0)
, V
JMAX.
C
C
DD
= 25°C
= 100°C
Igs=± 1mA (Open Drain)
= 50 V)
Test Conditions
TO-220 / D
TO-220
D
1.02
2
0.83
104
30
4.3
PAK
28
7
-
2
PAK
-55 to 150
Value
Min.
4000
± 30
TBD
62.5
600
600
300
30
Max Value
TO-220FP
TO-220FP
280
Typ.
7
4.3 (*)
28 (*)
2500
3.85
0.26
7 (*)
32
Max.
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
Unit
W
V
V
V
A
A
A
V
V
mJ
A
V

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