STP9NK60ZFD STMicroelectronics, STP9NK60ZFD Datasheet - Page 3

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STP9NK60ZFD

Manufacturer Part Number
STP9NK60ZFD
Description
N-Channel 600 V-0.85 ohm-7 A TO-220 Fast Diode SuperMESH MOSFET
Manufacturer
STMicroelectronics
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
STP9NK60ZFDFP
Manufacturer:
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Quantity:
25 000
Part Number:
STP9NK60ZFDFP
Manufacturer:
ST
0
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
r(Voff)
d(on)
Q
Q
fs
d(off)
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
SD
t
oss
t
t
t
t
iss
rss
rr
gs
gd
c
r
(1)
f
f
g
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
I
I
V
(see test circuit, Figure 5)
D
V
SD
SD
STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
DD
G
G
G
DS
= mA, V
= 4.7
= 4.7
= 4.7
= 7 A, V
= 7 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 15 V
= ± 20V
= 10V, I
= 0V, V
= 300 V, I
= 480V, I
= 10V
= 300 V, I
= 480V, I
= 30V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
GS
, I
,
V
V
V
GS
DS
I
D
D
GS
D
GS
j
GS
D
D
= 0
D
= 150°C
= 3.5 A
D
= 100µA
= 3.5 A
= 0V to 480V
= 0
= 7 A,
= 7 A,
= 10 V
= 10 V
= 3.5 A
= 3.5 A
= 10V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
600
3
oss
when V
1110
Typ.
3.75
0.85
Typ.
Typ.
Typ.
Typ.
TBD
TBD
135
150
5.3
30
72
19
17
38
21
43
15
20
11
7
8
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
0.95
±10
1.6
4.5
50
53
28
1
7
Unit
Unit
Unit
Unit
Unit
µC
µA
µA
µA
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
A
V
A
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