NL27WZ16DTT1G ON Semiconductor, NL27WZ16DTT1G Datasheet - Page 2

• Manufacturer Part Number: NL27WZ16DTT1G
• Description: IC BUFFER DUAL NON-INVERT 6TSOP
• Manufacturer: ON Semiconductor
• Series: 27WZr

Specifications of NL27WZ16DTT1G

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 2
• Number Of Bits Per Element: 1
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Logic Family: LCX
• Number Of Channels Per Chip: 2
• Polarity: Non-Inverting
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.65 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• High Level Output Current: - 32 mA
• Low Level Output Current: 32 mA
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 40 C
• Number Of Lines (input / Output): 2 / 2
• Propagation Delay Time: 4.6 ns at 3.3 V, 3.8 ns at 5 V
• Supply Voltage Range: 1.65V To 5.5V
• Logic Case Style: TSOP
• No. Of Pins: 6
• Operating Temperature Range: -55°C To +125°C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Family Type: 27WZ
• Input Type: 3-State
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NL27WZ16DTT1GOS; NL27WZ16DTT1GOS; NL27WZ16DTT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
2. Tested to EIA/JESD22−A114−A
3. Tested to EIA/JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA/JESD78
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Power Dissipation in Still Air
Thermal Resistance
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
ESD Withstand Voltage
Latchup Performance
Supply Voltage
Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
O
absolute maximum rating must be observed.
Characteristics
Parameter
Above V
CC
Output in Z or LOW State (Note 1)
and Below GND at 85°C (Note 5)
Charged Device Model (Note 4)
http://onsemi.com
Human Body Model (Note 2)
Machine Model (Note 3)
V
(High or LOW State)
Data Retention Only
2
V
CC
V
V
CC
CC
CC
SC−88, TSOP−6
= 1.8 V $0.15 V
SC−88, TSOP−6
= 2.5 V $0.2 V
=3.0 V $0.3 V
=5.0 V $0.5 V
V
Operating
V
O
I
< GND
< GND
Symbol
Symbol
I
Latchup
Dt/DV
V
T
I
V
V
I
I
GND
q
V
V
P
I
STG
T
T
ESD
T
V
OK
I
CC
V
CC
IK
JA
CC
O
O
O
A
D
L
J
I
I
*0.5 ≤ V
*0.5 ≤ V
1.65
Min
−55
1.5
*0.5 to )7.0
*65 to )150
0
0
0
0
0
0
> 2000
Value
$100
$100
)150
$500
> 200
*50
*50
$50
200
333
260
N/A
I
O
≤ )7.0
≤ 7.0
+125
Max
5.5
5.5
5.5
5.5
20
20
10
5
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V