SPB80N06S2L09 Infineon Technologies, SPB80N06S2L09 Datasheet
SPB80N06S2L09
Related parts for SPB80N06S2L09
SPB80N06S2L09 Summary of contents
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OptiMOS Power-Transistor = = = = Feature • N-Channel • Enhancement mode • Logic Level •=175°C operating temperature • Avalanche rated • dv/dt rated Type Package SPP80N06S2L-09 P-TO220-3-1 Q67060-S6031 SPB80N06S2L-09 P-TO263-3-2 Q67060-S6032 Maximum Ratings, °C, unless otherwise ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot C SPP80N06S2L-09 200 W 160 140 120 100 100 120 140 160 3 Safe operating area ...
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Typ. output characteristic =25° parameter µs p SPP80N06S2L-09 190 P = 190W tot A i 160 140 120 100 ...
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Drain-source on-state resistance DS(on) j parameter : SPP80N06S2L-09 30 mΩ 98 typ -60 -20 ...
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Typ. avalanche energy par 400 mJ 300 250 200 150 100 105 15 Drain-source ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...