MBR30200PT

Manufacturer Part NumberMBR30200PT
DescriptionWide Temperature Range and High Tjm Schottky Barrier Rectifiers
ManufacturerSirectifier Semiconductors
MBR30200PT datasheet
 
1
Page 1
2
Page 2
3
Page 3
Page 1/3

Download datasheet (133Kb)Embed
Next
MBR30100PT thru MBR30200PT
Wide Temperature Range and High T
A
C
A
C(TAB)
C
A
A=Anode, C=Cathode, TAB=Cathode
V
V
RRM
RMS
V
V
MBR30100PT
100
70
MBR30150PT
150
105
MBR30200PT
200
140
Symbol
Characteristics
I
Maximum Average Forward Rectified Current
(AV)
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
I
FSM
Superimposed On Rated Load (JEDEC METHOD)
dv/dt
Voltage Rate Of Change (Rated V
Maximum Forward
V
F
Voltage (Note 1)
Maximum DC Reverse Current
I
R
At Rated DC Blocking Voltage
R
Typical Thermal Resistance (Note 2)
OJC
C
Typical Junction Capacitance Per Element (Note 3)
J
T
Operating Temperature Range
J
T
Storage Temperature Range
STG
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
Schottky Barrier Rectifiers
jm
Dimensions TO-247AD
A
V
DC
V
100
150
200
o
@T
=125 C
C
)
R
o
I
=15A @T
=25 C
F
J
o
I
=15A @T
=125 C
F
J
o
I
=30A @T
=25 C
F
J
o
I
=30A @T
=125 C
F
J
o
@T
=25 C
J
o
@T
=125 C
J
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780
0.800
B
20.80 21.46
0.819
0.845
C
15.75 16.26
0.610
0.640
D
3.55
3.65
0.140
0.144
E
4.32
5.49
0.170
0.216
F
5.4
6.2
0.212
0.244
G
1.65
2.13
0.065
0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040
0.055
K
10.8
11.0
0.426
0.433
L
4.7
5.3
0.185
0.209
M
0.4
0.8
0.016
0.031
N
1.5
2.49
0.087
0.102
Maximum Ratings
Unit
30
A
250
A
10000
V/us
0.85
0.70
V
0.98
0.85
0.05
mA
10
o
2.2
C/W
700
pF
o
-55 to +150
C
o
-55 to +150
C

MBR30200PT Summary of contents

  • Page 1

    ... MBR30100PT thru MBR30200PT Wide Temperature Range and High C(TAB A=Anode, C=Cathode, TAB=Cathode V V RRM RMS V V MBR30100PT 100 70 MBR30150PT 150 105 MBR30200PT 200 140 Symbol Characteristics I Maximum Average Forward Rectified Current (AV) Peak Forward Surge Current 8.3ms Single Half-Sine-Wave ...

  • Page 2

    ... MBR30100PT thru MBR30200PT Wide Temperature Range and High T 1000 100 =175 ¢ =125 ¢ =25 ¢ 0.1 0 0.5 1 1.5 FORWARD VOLTAGE DROP, V Figure 1. Max. Forward Voltage Drop Characteristics (PerLeg 0.17 0 0.08 0.01 (THERMAL RESISTANCE) 0.001 0.0000 0.0001 1 Figure 4. Max. Thermal Impedance Z ...

  • Page 3

    ... MBR30100PT thru MBR30200PT Wide Temperature Range and High T 180 175 RTHJC(DC)=2.20 170 165 160 DC 155 150 145 140 AVERAGE FORWARD CURRENT, I Figure 5. Max. Allowable Case Temperature Vs. Average Forward Current (PerLeg) 1000 100 10 SQUARE WAVE PULSE DURATION, T Figure 7. Max. Non-Repetitive Surge Current ...