MBR30200PT Sirectifier Semiconductors, MBR30200PT Datasheet

no-image

MBR30200PT

Manufacturer Part Number
MBR30200PT
Description
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Manufacturer
Sirectifier Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR30200PT
Manufacturer:
NAMC
Quantity:
20 000
C(TAB)
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
* High surge capacity
* For use in low voltage, high frequency inverters, free
Symbol
whelling, and polarity protection applications
dv/dt
MBR30100PT
MBR30150PT
MBR30200PT
R
T
I
I
A=Anode, C=Cathode, TAB=Cathode
FSM
(AV)
V
C
T
I
STG
OJC
R
Wide Temperature Range and High T
F
J
J
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
Maximum Forward
Voltage (Note 1)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
MBR30100PT thru MBR30200PT
A
V
100
150
200
C
RRM
A
V
A
V
105
140
70
F
RMS
V
Characteristics
C
V
100
150
200
V
DC
A
R
)
I
I
I
I
Dimensions TO-247AD
F
F
F
F
=15A @T
=15A @T
=30A @T
=30A @T
@T
@T
@T
C
J
J
J
J
J
J
jm
=125 C
=25 C
=125 C
=25 C
=125 C
=25 C
=125 C
Schottky Barrier Rectifiers
o
o
o
o
o
o
o
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
Maximum Ratings
-55 to +150
-55 to +150
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
10000
0.70
0.85
0.98
0.85
0.05
250
700
2.2
30
10
19.81 20.32
20.80 21.46
15.75 16.26
3.55
4.32
1.65
10.8
Min.
Millimeter
5.4
1.0
4.7
0.4
1.5
-
Max.
3.65
5.49
2.13
11.0
2.49
6.2
4.5
1.4
5.3
0.8
Min.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
Inches
o
V/us
Unit
C/W
mA
pF
o
o
A
A
V
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
C
C
Max.

Related parts for MBR30200PT

MBR30200PT Summary of contents

Page 1

... MBR30100PT thru MBR30200PT Wide Temperature Range and High C(TAB A=Anode, C=Cathode, TAB=Cathode V V RRM RMS V V MBR30100PT 100 70 MBR30150PT 150 105 MBR30200PT 200 140 Symbol Characteristics I Maximum Average Forward Rectified Current (AV) Peak Forward Surge Current 8.3ms Single Half-Sine-Wave ...

Page 2

... MBR30100PT thru MBR30200PT Wide Temperature Range and High T 1000 100 =175 ¢ =125 ¢ =25 ¢ 0.1 0 0.5 1 1.5 FORWARD VOLTAGE DROP, V Figure 1. Max. Forward Voltage Drop Characteristics (PerLeg 0.17 0 0.08 0.01 (THERMAL RESISTANCE) 0.001 0.0000 0.0001 1 Figure 4. Max. Thermal Impedance Z ...

Page 3

... MBR30100PT thru MBR30200PT Wide Temperature Range and High T 180 175 RTHJC(DC)=2.20 170 165 160 DC 155 150 145 140 AVERAGE FORWARD CURRENT, I Figure 5. Max. Allowable Case Temperature Vs. Average Forward Current (PerLeg) 1000 100 10 SQUARE WAVE PULSE DURATION, T Figure 7. Max. Non-Repetitive Surge Current ...

Related keywords