STGP10NB60SDFP

Manufacturer Part NumberSTGP10NB60SDFP
DescriptionN-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
ManufacturerSTMicroelectronics
STGP10NB60SDFP datasheets

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TYPE
V
CES
STGP10NB60SDFP
600
HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
™
PowerMESH
IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
Collector-Emitter Voltage (V
CES
V
Reverse Battery Protection
ECR
V
Gate-Emitter Voltage
GE
I
Collector Current (continuous) at T
C
I
Collector Current (continuous) at T
C
I
( )
Collector Current (pulsed)
CM
P
Total Dissipation at T
TOT
Derating Factor
V
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
ISO
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
November 2002
N-CHANNEL 10A - 600V - TO-220FP
V
I
CE(sat)
C
< 1.8 V
10 A
Parameter
= 0)
GS
= 25°C
C
= 100°C
C
= 25°C
C
STGP10NB60SDFP
PowerMesh™ IGBT
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
600
20
± 20
20
10
80
30
0.2
2500
–65 to 150
175
( ) Pulse width limited by safe operating area
Unit
V
V
V
A
A
A
W
W/°C
V
°C
°C
1/8

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STGP10NB60SDFP Summary of contents

  • Page 1

    ... Max. Operating Junction Temperature j November 2002 N-CHANNEL 10A - 600V - TO-220FP V I CE(sat) C < 1 Parameter = 25° 100° 25°C C STGP10NB60SDFP PowerMesh™ IGBT TO-220FP INTERNAL SCHEMATIC DIAGRAM Value 600 20 ± 0.2 2500 –65 to 150 175 ( ) Pulse width limited by safe operating area ...

  • Page 2

    ... STGP10NB60SDFP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Collector-Emitter Break-down BR(CES) Voltage V Emitter Collector Break-down BR(CES) Voltage I Collector cut-off Current CES ( Gate-Emitter Leakage GES ...

  • Page 3

    ... A, clamp 125 °C Test Conditions 125 ° =125°C, di/dt = 100A/ s Thermal Impedance STGP10NB60SDFP Min. Typ. Max. Unit 0.7 µs 0.46 µs 8 A/µs 0.6 mJ Min. Typ. Max. Unit 2.2 µs 1.2 µs 1.2 µs 5 ...

  • Page 4

    ... STGP10NB60SDFP Output Characteristics Transconductance Collector-Emitter On Voltage vs Collector Cur- rent 4/8 Transfer Characteristics Collector-Emitter On Voltage vs Temperature Gate Threshold Voltage vs Temperature ...

  • Page 5

    ... Capacitance Variations Off Losses vs Gate Resistance Normalized Break-down Voltage vs Temp. STGP10NB60SDFP Gate Charge vs Gate-Emitter Voltage Off Losses vs Collector Current Off Losses vs Temperature 5/8 ...

  • Page 6

    ... STGP10NB60SDFP Emitter-Collector Diode Characteristics Fig. 1: Gate Charge test Circuit 6/8 Fig. 2: Test Circuit For Inductive Load Switching ...

  • Page 7

    ... L7 9 Ø 3 MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.5 0.045 1.5 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 .0385 3.6 0.114 16.4 0.626 9.3 0.354 3.2 0.118 STGP10NB60SDFP inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.141 0.645 0.366 0.126 7/8 ...

  • Page 8

    ... STGP10NB60SDFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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